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| Efficient PbS QD solar cell with an inverted structure 期刊论文 solar energy materials and solar cells, 2016, 卷号: 159, 页码: 503-509 Weizhe Xu; Furui Tan; Qing Liu; Xiansheng Liu; Qiwei Jiang; Ling Wei; Weifeng Zhang; Zhijie Wang; Shengchun Qu; Zhanguo Wang
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:31/0  |  提交时间:2017/03/10 |
| Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201 作者: Cao YL ; Yang T![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:20/0  |  提交时间:2011/07/05
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| Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者: Yang T![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
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| 1.3-mu m In(Ga)As Quantum-Dot VCSELs Fabricated by Dielectric-Free Approach With Surface-Relief Process 期刊论文 ieee photonics technology letters, 2011, 卷号: 23, 期号: 2, 页码: 91-93 Xu DW; Yoon SF; Ding Y; Tong CZ; Fan WJ; Zhao LJ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:103/2  |  提交时间:2011/07/05
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| The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914 作者: Jin P ; Ye XL ; Zhou XL![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:53/4  |  提交时间:2011/07/05
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| Anisotropic transport of two-dimensional electron gas modulated by embedded elongated GaSb/GaAs quantum dots 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 3, 页码: article no.32103 Li GD; Jiang C; Zhu QS; Sakaki H
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:61/9  |  提交时间:2011/07/05
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| Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者: Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:46/4  |  提交时间:2011/07/15
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| Impact of symmetrized and Burt-Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 8, 页码: art. no. 088102 Gu YX (Gu Yong-Xian); Yang T (Yang Tao); Ji HM (Ji Hai-Ming); Xu PF (Xu Peng-Fei); Wang ZG (Wang Zhan-Guo)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:141/24  |  提交时间:2010/09/07
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| High Characteristic Temperature 1.3 mu m InAs/GaAs Quantum-Dot Lasers Grown by Molecular Beam Epitaxy 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 2, 页码: art. no. 027801 Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Cao YL (Cao Yu-Lian); Xu PF (Xu Peng-Fei); Gu YX (Gu Yong-Xian); Ma; WQ (Ma Wen-Quan); Wang ZG (Wang Zhan-Guo)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:151/30  |  提交时间:2010/04/13
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| Characterization and analysis of two-dimensional GaAs-based photonic crystal nanocavities at room temperature 期刊论文 microelectronic engineering, 2010, 卷号: 87, 期号: 10, 页码: 1834-1837 Peng YS (Peng Y. S.); Xu B (Xu B.); Ye XL (Ye X. L.); Niu JB (Niu J. B.); Jia R (Jia R.); Wang ZG (Wang Z. G.)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:108/27  |  提交时间:2010/08/17
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