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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：55/5  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：98/7  |  提交时间：2011/07/05
Combined structure of ZnO vertical well-aligned nanorods and net-like structures on AIN/sapphire 期刊论文
journal of crystal growth, 2007, 卷号: 306, 期号: 1, 页码: 12-15
Wei, HY (Wei, H. Y.); Cong, GW (Cong, G. W.); Zhang, PF (Zhang, P. F.); Hu, WG (Hu, W. G.); Wu, JJ (Wu, J. J.); Jiao, CM (Jiao, C. M.); Liu, XL (Liu, X. L.); Zhu, QS (Zhu, Q. S.); Wang, ZG (Wang, Z. G.)
收藏  |  浏览/下载：27/0  |  提交时间：2010/03/29
Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 31, 期号: 1, 页码: 43-47
作者:  Jin P;  Xu B
收藏  |  浏览/下载：82/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP
收藏  |  浏览/下载：97/18  |  提交时间：2010/03/29
Effects of different modified underlayer surfaces on growth and optical properties of InGaN quantum dots 期刊论文
vacuum, 2005, 卷号: 77, 期号: 3, 页码: 307-314
Han, XX; Li, JM; Wu, JJ; Wang, XH; Li, DB; Liu, XL; Han, PD; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：57/0  |  提交时间：2010/08/12
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文
9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001
Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15
Strain relaxation of InP film directly grown on GaAs patterned compliant substrate 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 71-76
作者:  Li DB
收藏  |  浏览/下载：43/0  |  提交时间：2010/08/12

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