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| High resistance AlGaAs/GaAs quantum cascade detectors grown by solid source molecular beam epitaxy operating above liquid nitrogen temperature 期刊论文 semiconductor science and technology, 2010, 卷号: 25, 期号: 7, 页码: art. no. 075011 Liu JQ (Liu Junqi); Kong N (Kong Ning); Li L (Li Lu); Liu FQ (Liu Fengqi); Wang LJ (Wang Lijun); Chen JY (Chen Jianyan); Wang ZG (Wang Zhanguo)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:160/13  |  提交时间:2010/07/18
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| Optical properties of phase-separated GaN1-xPx alloys grown by light-radiation heating metal-organic chemical vapour deposition 期刊论文 chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2081-2083 Lu LW; Chen TJ; Shen B; Wang JN; Ge WK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:67/32  |  提交时间:2010/03/17
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| Formation of total-dose-radiation hardened materials by sequential oxygen and nitrogen implantation and multi-step annealing 期刊论文 semiconductor science and technology, 2004, 卷号: 19, 期号: 5, 页码: 571-573 Yi WB; Zhang EX; Chen M; Li N; Zhang GQ; Liu ZL; Wang X
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:180/57  |  提交时间:2010/03/09
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| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160 作者: Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:58/0  |  提交时间:2010/08/12
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| In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 期刊论文 silicon carbide and related materials 2001 pts 1 and 2 proceedings, 2002, 卷号: 389-3, 期号: 0, 页码: 339-342 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:78/0  |  提交时间:2010/08/12
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| In situ doping of 3C-SiC grown on (0001) sapphire substrates by LPCVD 会议论文 international conference on silicon carbide and related materials, tsukuba, japan, oct 28-nov 02, 2001 Sun GS; Luo MC; Wang L; Zhu SR; Li JM; Zeng YP; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:14/0  |  提交时间:2010/11/15
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| Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN 期刊论文 journal of crystal growth, 2002, 卷号: 234, 期号: 1, 页码: 145-152 Lu DC; Duan SK
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:100/7  |  提交时间:2010/08/12
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| Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:82/5  |  提交时间:2010/08/12
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| Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 501-505 作者: Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:147/24  |  提交时间:2010/08/12
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375 Kong MY; Zhang JP; Wang XL; Sun DZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:101/8  |  提交时间:2010/08/12
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