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CORC

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Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：66/3  |  提交时间：2010/03/08
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure 期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG; Kong, GL; Zeng, XB; Hao, HY; Liu, FZ
收藏  |  浏览/下载：104/29  |  提交时间：2010/03/08
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:  Zhao DG
收藏  |  浏览/下载：299/12  |  提交时间：2010/08/12
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF
收藏  |  浏览/下载：21/0  |  提交时间：2010/08/12
Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文
journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266
Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY
收藏  |  浏览/下载：81/3  |  提交时间：2010/08/12
Comprehensive analysis of microtwins in the 3C-SiC films on Si(001) substrates 期刊论文
journal of crystal growth, 2001, 卷号: 233, 期号: 1-2, 页码: 40-44
Zheng XH; Qu B; Wang YT; Dai ZZ; Han JY; Yang H; Liang JW
收藏  |  浏览/下载：98/10  |  提交时间：2010/08/12
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition 期刊论文
thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 237-240
Sun XL; Wang YY; Yang H; Li JB; Zheng LX; Xu DP; Wang ZG
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 208, 期号: 1-4, 页码: 322-326
Liu JP; Huang DD; Li JP; Lin YX; Sun DZ; Kong MY
收藏  |  浏览/下载：70/14  |  提交时间：2010/08/12
Photoluminescence and optical quenching of photoconductivity studies on undoped GaN grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 3, 页码: 228-232
Xu HZ; Wang ZG; Harrison I; Bell A; Ansell BJ; Winser AJ; Cheng TS; Foxon CT; Kawabe M
收藏  |  浏览/下载：45/0  |  提交时间：2010/08/12

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