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Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载：50/5  |  提交时间：2011/07/05
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/14
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/09
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载：122/0  |  提交时间：2010/03/29
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:  Zhang Y
收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11
A model for scattering due to interface roughness in finite quantum wells 期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 12, 页码: 1207-1212
作者:  Han XX
收藏  |  浏览/下载：60/0  |  提交时间：2010/04/11
Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者:  Jiang DS
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
The effect of inserting strain-compensated GaNAs layers on the luminescence properties of GaInNAs/GaAs quantum well 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 339-344
作者:  Jiang DS
收藏  |  浏览/下载：58/0  |  提交时间：2010/08/12
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH
收藏  |  浏览/下载：82/6  |  提交时间：2010/08/12

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