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Investigation of cracks in GaN films grown by combined hydride and metal organic vapor-phase epitaxial method 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.69
作者:  Song HP;  Wei HY;  Li CM;  Jiao CM
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05
One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals 期刊论文
nanotechnology, 2010, 卷号: 21, 期号: 28, 页码: art. no. 285602
Tang AW (Tang Aiwei); Qu SC (Qu Shengchun); Li K (Li Kai); Hou YB (Hou Yanbing); Teng F (Teng Feng); Cao J (Cao Jie); Wang YS (Wang Yongsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：218/43  |  提交时间：2010/07/18
Enhancement of field emission properties in La-doped ZnO films prepared by magnetron sputtering 期刊论文
chinese physics letters, 2008, 卷号: 25, 期号: 7, 页码: 2657-2660
Li, J; Wang, RZ; Lan, W; Zhang, XW; Duan, ZQ; Wang, B; Yan, H
收藏  |  浏览/下载：53/2  |  提交时间：2010/03/08
Characterization of self-organized InAs/GaAs quantum dots under strain-induced and temperature-controlled nucleation mechanisms by atomic force microscopy and photoluminescence spectroscopy 会议论文
2nd ieee international nanoelectronics conference, shanghai, peoples r china, mar 24-27, 2008
Liang, LY; Ye, XL; Jin, P; Chen, YH; Wang, ZG
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/09
Evolution of wetting layer of InAs/GaAs quantum dots studied by reflectance difference spectroscopy 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 7, 页码: art.no.071903
作者:  Jin P
收藏  |  浏览/下载：547/12  |  提交时间：2010/04/11
GROWTH  INAS  GAAS  SURFACES  
1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 期刊论文
thin solid films, 2006, 卷号: 508, 期号: 1-2, 页码: 396-398
Yu J; Kasper E; Oehme M
收藏  |  浏览/下载：63/0  |  提交时间：2010/04/11
Evolution of the amount of InAs in wetting layers in an InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 9, 页码: 2207-2211
作者:  Jin P;  Ye XL
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏  |  浏览/下载：43/0  |  提交时间：2010/04/11

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