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CORC

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Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Growth temperature effect on the optical and material properties of AlxInyGa1-x-yN epilayers grown by MOCVD 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 84-90
作者:  Li DB
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Strong red light emission from silicon nanocrystals embedded in SIO2 matrix 会议论文
conference on optoelectronic and microelectronic materials and devices (commad), sydney, australia, dec 11-13, 2002
Chen WD; Wang YQ; Chen CY; Diao HW; Liao XB; Kong GL; Hsu CC
收藏  |  浏览/下载：8/0  |  提交时间：2010/10/29
The structure and current-voltage characteristics of multi-sheet InGaN quantum dots grown by a new multi-step method 期刊论文
journal of crystal growth, 2002, 卷号: 243, 期号: 1, 页码: 19-24
Chen Z; Lu DC; Han P; Liu XL; Wang XH; Li YF; Yuan HR; Lu Y; Bing LD; Zhu QS; Wang ZG; Wang XF; Yan L
收藏  |  浏览/下载：41/0  |  提交时间：2010/08/12
Temperature dependence of electron redistribution in modulation-doped InAs/GaAs quantum dots 期刊论文
journal of crystal growth, 2000, 卷号: 219, 期号: 3, 页码: 199-204
作者:  Xu B;  Ye XL
收藏  |  浏览/下载：59/0  |  提交时间：2010/08/12
INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY 期刊论文
journal of vacuum science & technology b, 1994, 卷号: 12, 期号: 4, 页码: 2437-2439
YU T; LAIHO R; HEIKKILA L
收藏  |  浏览/下载：21/0  |  提交时间：2010/11/15
TRANSMISSION ELECTRON-MICROSCOPY STUDY OF N+-IMPLANTED SILICON ON INSULATOR BY ENERGY-FILTERED IMAGING 期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 3, 页码: 1850-1852
DUAN XF; DU AY; CHU YM
收藏  |  浏览/下载：15/0  |  提交时间：2010/11/15

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