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科研机构
半导体研究所 [10]
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期刊论文 [9]
会议论文 [1]
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2015 [1]
2011 [1]
2010 [1]
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半导体材料 [10]
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Synthesis of in-plane and stacked graphene/ hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition
期刊论文
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 16046-16053
Junhua Meng
;
Xingwang Zhang
;
Haolin Wang
;
Xibiao Ren
;
Chuanhong Jin
;
Zhigang Yin
;
Xin Liu
;
Heng Liu
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2016/03/23
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts
期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ
;
Lin ZJ
;
Zhang Y
;
Meng LG
;
Cao ZF
;
Luan CB
;
Chen H
;
Wang ZG
收藏
  |  
浏览/下载:58/2
  |  
提交时间:2011/07/05
AlGaN/GaN heterostructures
thermal stressing
polarization
self-consistently solving Schrodinger's and Poisson's equations
FIELD-EFFECT TRANSISTORS
POLARIZATION
STABILITY
CHARGE
GAN
In-plane optical anisotropy in GaAsN/GaAs single-quantum well investigated by reflectance-difference spectroscopy
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 1, 页码: art. no. 013516
Yu JL (Yu J. L.)
;
Chen YH (Chen Y. H.)
;
Ye XL (Ye X. L.)
;
Jiang CY (Jiang C. Y.)
;
Jia CH (Jia C. H.)
收藏
  |  
浏览/下载:293/18
  |  
提交时间:2010/08/17
MOLECULAR-BEAM EPITAXY
STRAIN RELAXATION
GROWTH TEMPERATURE
INTERFACE
ALLOYS
GAAS
HETEROSTRUCTURES
MICROSTRUCTURE
GANXAS1-X
NITROGEN
Temperature dependence of effective g factor in diluted magnetic semiconductor (Ga,Mn)As
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 5, 页码: art. no. 053901
Zhou, R
;
Sun, BQ
;
Ruan, XZ
;
Luo, HH
;
Ji, Y
;
Wang, WZ
;
Zhang, F
;
Zhao, JH
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  |  
浏览/下载:52/2
  |  
提交时间:2010/03/08
GAAS
HETEROSTRUCTURES
ALLOYS
Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures
期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071920
Tang YQ
;
Shen B
;
He XW
;
Han K
;
Tang N
;
Chen WH
;
Yang ZJ
;
Zhang GY
;
Chen YH
;
Tang CG
;
Wang ZG
;
Cho KS
;
Chen YF
收藏
  |  
浏览/下载:65/0
  |  
提交时间:2010/03/29
POLARIZATION
Strong in-plane optical anisotropy of asymmetric (001) quantum wells
期刊论文
journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.096102
作者:
Xu B
;
Ye XL
收藏
  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
HETEROSTRUCTURES
SPECTROSCOPY
INTERFACES
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
;
Hu GX (Hu Guoxin)
;
Wang JX (Wang Junxi)
;
Li HP (Li Jianping)
;
Wang ZG (Wang Zhanguo)
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/04/11
AlGaN/AlN/GaN
two-dimensional electron gas
MOCVD
ALGAN/GAN HETEROSTRUCTURES
POLARIZATION
TRANSISTORS
GANHEMTS
GAS
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 3-4, 页码: 504-508
Chen, Z
;
Chua, SJ
;
Yuan, HR
;
Liu, XL
;
Lu, DC
;
Han, PD
;
Wang, ZG
收藏
  |  
浏览/下载:271/35
  |  
提交时间:2010/03/09
metalorganic chemical vapor deposition
Effects of polarization field on formation of two-dimensional electron gas in (0001) and (11(2)over-bar0) plane AlGaN/GaN heterostructures
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
作者:
Han PD
收藏
  |  
浏览/下载:83/1
  |  
提交时间:2010/10/29
metalorganic chemical vapor deposition
semiconducting III-V materials
DOPED AL(X)GA1-XN/GAN HETEROSTRUCTURES
CARRIER CONFINEMENT
EFFECT TRANSISTORS
PHOTOLUMINESCENCE
MOBILITY
HETEROJUNCTION
INTERFACE
HFETS
INPLANE X-RAY-SCATTERING OF EPITAXIAL STRUCTURES
期刊论文
journal of crystal growth, 1995, 卷号: 152, 期号: 4, 页码: 354-358
CUI SF
;
WANG YT
;
ZHUANG Y
;
LI M
;
MAI ZH
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/17
STRAIN RELAXATION
HETEROEPITAXIAL LAYERS
DEVICE STRUCTURES
ROCKING CURVES
SUPERLATTICES
DIFFRACTION
HETEROSTRUCTURES
MISFIT
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