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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：27/0  |  提交时间：2012/01/06
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：70/3  |  提交时间：2010/03/08
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：77/0  |  提交时间：2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载：56/0  |  提交时间：2010/04/11
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
作者:  Li DB;  Wei HY;  Han XX
收藏  |  浏览/下载：61/22  |  提交时间：2010/03/17
cracks  
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：77/0  |  提交时间：2010/03/17
cracks  
The growth morphologies of GaN layer on Si(111) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA; Liu XL; Lu DC; Yuan HR; Hu GQ; Wang XH; Wang ZG; Duan XF
收藏  |  浏览/下载：23/0  |  提交时间：2010/08/12
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：99/8  |  提交时间：2010/08/12

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