QQ客服 官方微博 反馈留言

浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High efficiency passively Q-switched mode-locking Nd:GdVO4 laser with LT-In0.25Ga0.75As saturable absorber 期刊论文 optical materials, 2009, 卷号: 31, 期号: 8, 页码: 1215-1217 Pan SD; Zhao LN; Yuan Y; Zhu SN; He JL; Wang YG 收藏  |  浏览/下载：104/2  |  提交时间：2010/03/08 Semiconductor saturable absorber  Q-switch  Mode lock  Nd:GdVO4   An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者:  Zhang ML;  Hou QF 收藏  |  浏览/下载：129/30  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMT  MOCVD  SiC substrate  Power device   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz 期刊论文 solid-state electronics, 2008, 卷号: 52, 期号: 6, 页码: 926-929 Wang, XL; Chen, TS; Xiao, HL; Wang, CM; Hu, GX; Luo, WJ; Tang, J; Guo, LC; Li, JM 收藏  |  浏览/下载：78/1  |  提交时间：2010/03/08 AlGaN/AlN/GaN  HEMTs  SiC  power   AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD 期刊论文 journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 835-839 Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Ma ZY (Ma Zhiyong); Ran JX (Ran Junxue); Wang CM (Wang Cuimei); Mao HL (Mao Hongling); Tang H (Tang Han); Li HP (Li Hanping); Wang JX (Wang Junxi); Zeng YP (Zeng Yiping); Jinmin LM (Li Jinmin); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29 2DEG   Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 12, 页码: 3543-3546 Wu, BP; Wu, DH; Ni, HQ; Huang, SS; Zhan, F; Xiong, YH; Xu, YQ; Niu, ZC 收藏  |  浏览/下载：44/1  |  提交时间：2010/03/08 LAYERS  SURFACTANT  SUBSTRATE  HEMT  SB   Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber 期刊论文 optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 970-973 Liu J; Wang YG; Tian WM; Gao LY; He JL; Ma XY 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 LT-GaAs  Nd : GdVO4  diode-pump laser  mode-locking  Q-switching  ND-YVO4 LASER  LOCKING  MIRROR  YAG   Growth and characterization of 0.8-mu m gate length AlGaN/GaN HEMTs on sapphire substrates 期刊论文 science in china series f-information sciences, 2005, 卷号: 48, 期号: 6, 页码: 808-814 Wang XL; Wang CM; Hu GX; Wang JX; Ran JX; Fang CB; Li JP; Zeng YP; Li JM; Liu XY; Liu J; Qian H 收藏  |  浏览/下载：326/7  |  提交时间：2010/04/11 HEMT  GaN  MOCVD  power device  FIELD-EFFECT TRANSISTORS  SURFACE PASSIVATION   Realization of GaAs/AlGaAs quantum-cascade lasers with high average optical power 期刊论文 solid-state electronics, 2005, 卷号: 49, 期号: 12, 页码: 1961-1964 Liu JQ; Liu FQ; Lu XZ; Guo Y; Wang ZG 收藏  |  浏览/下载：300/3  |  提交时间：2010/04/11 X-ray diffraction  molecular beam epitaxy  semiconducting gallium compounds  quantum-cascade lasers (QCLs)  UNIPOLAR SEMICONDUCTOR-LASERS  MU-M  OPERATION   Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates 期刊论文 solid-state electronics, 2005, 卷号: 49, 期号: 8, 页码: 1387-1390 Wang XL; Wang CM; Hu GX; Wang JX; Chen TS; Jiao G; Li JP; Zeng YP; Li JM 收藏  |  浏览/下载：95/18  |  提交时间：2010/03/17 HEMT