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| An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者: Zhang ML ; Hou QF![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:132/30  |  提交时间:2010/03/08
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| QtUCP-A program for determining unit-cell parameters in electron diffraction experiments using double-tilt and rotation-tilt holders 期刊论文 ultramicroscopy, 2008, 卷号: 108, 期号: 12, 页码: 1540-1545 Zhao HS; Wu DQ; Yao JC; Chang AM
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:47/0  |  提交时间:2010/03/08
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| Transport phenomena in radial flow MOCVD reactor with three concentric vertical inlets 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 498-508 Zuo R (Zuo Ran); Zhang H (Zhang Hong); Liu XL (Liu Xiang-lin)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:60/0  |  提交时间:2010/04/11
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| GaN1-xPx ternary alloys with high P composition grown by metal-organic chemical vapor deposition 期刊论文 journal of crystal growth, 2003, 卷号: 255, 期号: 1-2, 页码: 52-56 Chen DJ; Shen B; Bi ZX; Zhang KX; Gu SL; Zhang R; Shi Y; Zheng YD; Sun XH; Wan SK; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:472/1  |  提交时间:2010/08/12
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| Capacitance-voltage characteristic as a trace of the exciton evolvement from spatially direct to indirect in quantum wells 期刊论文 semiconductor science and technology, 2001, 卷号: 16, 期号: 10, 页码: 822-825 作者: Tan PH![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:74/4  |  提交时间:2010/08/12
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| Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 527-531 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:83/6  |  提交时间:2010/08/12
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| Comparative study of the structural properties of nanocrystalline Ge : H plasma deposited onto the cathode and the anode using high hydrogen dilutions 期刊论文 thin solid films, 1999, 卷号: 346, 期号: 1-2, 页码: 91-95 Poulsen PR; Wang MX; Xu J; Li W; Chen KJ; Wang GH; Feng D
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:33/0  |  提交时间:2010/08/12
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| Low-temperature growth properties of Si1-xGex by disilane and solid-Ge molecular beam epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 535-540 Liu JP; Kong MY; Li JP; Liu XF; Huang DD; Sun DZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
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| Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy 期刊论文 journal of crystal growth, 1997, 卷号: 181, 期号: 4, 页码: 441-445 Liu JP; Liu XF; Li JP; Sun DZ; Kong MY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:22/0  |  提交时间:2010/11/17
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| INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION 期刊论文 journal of applied physics, 1991, 卷号: 70, 期号: 8, 页码: 4172-4175 LI CR; MAI ZH; CUI SF; ZHOU JM; WANG YT
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:18/0  |  提交时间:2010/11/15
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