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| Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文 physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210 作者: Jin P ; Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
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| High quality microcrystalline Si films by hydrogen dilution profile 期刊论文 thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455 Gu JH (Gu Jinhua); Zhu MF (Zhu Meifang); Wang LJ (Wang Liujiu); Liu FZ (Liu Fengzhen); Zhou BQ (Zhou Bingqing); Ding K (Ding Kun); Li GH (Li Guohua)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:39/0  |  提交时间:2010/04/11
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| Growth of crack-free GaN films on Si(111) substrate by using Al-rich AlN buffer layer 期刊论文 journal of applied physics, 2004, 卷号: 96, 期号: 9, 页码: 4982-4988 Lu Y; Cong GW; Liu XL; Lu DC; Zhu QS; Wang XH; Wu JJ; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:79/29  |  提交时间:2010/03/09
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| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文 journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160 作者: Jiang DS![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:56/0  |  提交时间:2010/08/12
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| Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文 journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369 Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
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| Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111) 期刊论文 journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40 作者: Zhao DG![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:300/12  |  提交时间:2010/08/12
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| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438 作者: Jin P ; Ye XL ; Li CM ; Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者: Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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| A novel line-order of InAs quantum dots on GaAs 期刊论文 journal of crystal growth, 2002, 卷号: 241, 期号: 1-2, 页码: 69-73 作者: Li CM ; Xu B ; Jin P![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:46/0  |  提交时间:2010/08/12
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| Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 376-380 Zheng LX; Xie MH; Xu SJ; Cheung SH; Tong SY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:81/5  |  提交时间:2010/08/12
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