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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Carrier tunneling effects on the temperature dependent photoluminescence of InAs/GaAs quantum dot: Simulation and experiment 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.83501 作者:  Zhou GY;  Zhang HY;  Xu B;  Ye XL 收藏  |  浏览/下载：69/4  |  提交时间：2011/07/05 INAS ISLANDS  MU-M  ESCAPE  GAAS  GAAS(100)  SUBSTRATE   Nanoinstabilities as revealed by shrinkage of nanocavities in silicon during irradiation 期刊论文 international journal of nanotechnology, 2006, 卷号: 3, 期号: 4 sp.iss.si, 页码: 492-516 Zhu, XF (Zhu, Xianfang); Wang, ZG (Wang, Zhanguo) 收藏  |  浏览/下载：60/0  |  提交时间：2010/03/29 nanocavity  nanoparticle  nanoinstabilities  open volume defect  thermodynamic nonequilibrium  nanosize  nanotime  energetic beam irradiation  amorphous structure  nanocurvature  surface energy  WALLED CARBON NANOTUBES  AMORPHOUS-SILICON  ION IRRADIATION  PREFERENTIAL AMORPHIZATION  IN-SITU  INSTABILITY  BEAM  IMPLANTATION  CAVITIES  POINT   Hydrogenated amorphous silicon films with significantly improved stability 期刊论文 solar energy materials and solar cells, 2001, 卷号: 68, 期号: 1, 页码: 123-133 Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 amorphous silicon  stability  A-SI-H  CONSTANT PHOTOCURRENT METHOD  PERSISTENT PHOTOCONDUCTIVITY  URBACH EDGE  SOLAR-CELLS  GAP STATES  ABSORPTION  DENSITY  SPECTROSCOPY  INCREASE   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：11/0  |  提交时间：2010/11/15 molecular beam epitaxy  MOBILITY   Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 127-131 Cao X; Zeng YP; Cui LJ; Kong MY; Pan LA; Wang BQ; Zhu ZP 收藏  |  浏览/下载：95/9  |  提交时间：2010/08/12 molecular beam epitaxy  MOBILITY   X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32 Pan Z; Wang YT; Li LH; Zhang W; Lin YW; Zhou ZQ; Wu RH 收藏  |  浏览/下载：50/0  |  提交时间：2010/08/12 x-ray diffraction  strain relaxation  GaNxAs1-x/GaAs  photoluminescence  RHEED  MOLECULAR-BEAM EPITAXY  TEMPERATURE PULSED OPERATION  BAND-GAP ENERGY  NITROGEN  GAASN  GANXAS1-X  GAAS1-XNX  ALLOYS  LASERS  LAYERS