CORC

在结果中检索

CORC

浏览/检索结果: 共68条，第1-10条 帮助

限定条件    
已选(0)清除 条数/页：   排序方式：
High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission 期刊论文
applied physics letters, 2014, 卷号: 105, 期号: 14, 页码: 141101
Wang, HL; Yu, HY; Zhou, XL; Kan, Q; Yuan, LJ; Chen, WX; Wang, W; Ding, Y; Pan, JQ
收藏  |  浏览/下载：17/0  |  提交时间：2015/03/20
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Luminous efficacy and color rendering index of high power white LEDs packaged by using red phosphor 期刊论文
journal of semiconductors, 2011, 卷号: 32, 期号: 1, 页码: 014011-1-014011-3
作者:  Lu Pengzhi;  Yang Hua
收藏  |  浏览/下载：8/0  |  提交时间：2011/08/16
High-power quantum dot superluminescent diode with integrated optical amplifier section 期刊论文
electronics letters, 2011, 卷号: 47, 期号: 21, 页码: 1191-
Wang, ZC; Jin, P; Lv, XQ; Li, XK; Wang, ZG
收藏  |  浏览/下载：14/0  |  提交时间：2012/02/06
The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载：50/4  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：53/10  |  提交时间：2011/07/05
Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文
spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630
作者:  Tang AW
收藏  |  浏览/下载：83/5  |  提交时间：2011/07/15
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/15
Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density 期刊论文
journal of physics d-applied physics, 2010, 卷号: 43, 期号: 48, 页码: art. no. 485102
Zhou XL (Zhou X. L.); Chen YH (Chen Y. H.); Jia CH (Jia C. H.); Ye XL (Ye X. L.); Xu B (Xu Bo); Wang ZG (Wang Z. G.)
收藏  |  浏览/下载：18/0  |  提交时间：2010/12/12
Improved electroluminescence from n-ZnO/AlN/p-GaN heterojunction light-emitting diodes 期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 20, 页码: art. no. 201102
You JB (You J. B.); Zhang XW (Zhang X. W.); Zhang SG (Zhang S. G.); Wang JX (Wang J. X.); Yin ZG (Yin Z. G.); Tan HR (Tan H. R.); Zhang WJ (Zhang W. J.); Chu PK (Chu P. K.); Cui B (Cui B.); Wowchak AM (Wowchak A. M.); Dabiran AM (Dabiran A. M.); Chow PP (Chow P. P.)
收藏  |  浏览/下载：225/45  |  提交时间：2010/06/18

©版权所有 ©2017 CSpace - Powered by CSpace