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科研机构
半导体研究所 [19]
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期刊论文 [16]
会议论文 [3]
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2010 [1]
2009 [2]
2008 [1]
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2003 [2]
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半导体材料 [19]
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Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films
期刊论文
applied physics a-materials science & processing, 2010, 卷号: 99, 期号: 1, 页码: 139-143
Liu B
;
Zhang Z
;
Zhang R
;
Fu DY
;
Xie ZL
;
Lu H
;
Schaff WJ
;
Song LH
;
Cui YC
;
Hua XM
;
Han P
;
Zheng YD
;
Chen YH
;
Wang ZG
收藏
  |  
浏览/下载:196/52
  |  
提交时间:2010/04/28
BAND-GAP
TEMPERATURE-DEPENDENCE
ENERGY
SEMICONDUCTORS
SPECTRA
EPITAXY
GROWTH
LAYERS
Dislocation core effect scattering in a quasitriangle potential well
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 11, 页码: art. no. 112102
作者:
Wei HY
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  |  
浏览/下载:237/104
  |  
提交时间:2010/03/08
aluminium compounds
carrier density
carrier mobility
dislocation density
dislocation scattering
gallium compounds
III-V semiconductors
semiconductor heterojunctions
wide band gap semiconductors
Spin precession and electron spin polarization wave in [001]-grown quantum wells
期刊论文
european physical journal b, 2009, 卷号: 70, 期号: 3, 页码: 397-401
作者:
Jia CH
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  |  
浏览/下载:73/1
  |  
提交时间:2010/03/08
SEMICONDUCTOR SPINTRONICS
PHYSICS
Spin precession induced by an effective magnetic field in a two-dimensional electron gas
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 23, 页码: art. no. 233108
作者:
Jia CH
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  |  
浏览/下载:260/47
  |  
提交时间:2010/03/08
quantum wells
spin polarised transport
spin-orbit interactions
two-dimensional electron gas
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:45/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
Defects in GaSb studied by coincidence Doppler broadening measurements
会议论文
13th international conference on positron annihilation (icpa-13), kyoto, japan, sep 07-12, 2003
Hu WG
;
Wang Z
;
Dai YQ
;
Wang SJ
;
Zhao YW
收藏
  |  
浏览/下载:26/1
  |  
提交时间:2010/10/29
coincidence Doppler broadening
defects
GaSb
positron annihilation
Ordering growth of InAs quantum dots on ultra-thin InGaAs strained layer
期刊论文
journal of crystal growth, 2004, 卷号: 265, 期号: 1-2, 页码: 60-64
Zhang, CL
;
Wang, ZG
;
Zhao, FA
;
Xu, B
;
Jin, P
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  |  
浏览/下载:212/52
  |  
提交时间:2010/03/09
line defects
Defects in GaSb studied by coincidence Doppler broadening measurements
期刊论文
positron annihilation, 2004, 卷号: icpa-13 proceedings, 期号: 445-6, 页码: 114-116
Hu, WG
;
Wang, Z
;
Dai, YQ
;
Wang, SJ
;
Zhao, YW
收藏
  |  
浏览/下载:130/19
  |  
提交时间:2010/03/09
coincidence Doppler broadening
defects
GaSb
positron annihilation
Microstructure of GaN films grown on Si(111) substrates by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 3-4, 页码: 416-423
Hu GQ
;
Kong X
;
Wan L
;
Wang YQ
;
Duan XF
;
Lu Y
;
Liu XL
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/08/12
amorphous layer
dislocation
transmission electron microscopy
metalorganic chemical vapor deposition
GaN
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
HETEROEPITAXIAL GROWTH
ELECTRON-DIFFRACTION
DEFECT STRUCTURE
HETEROSTRUCTURE
DISLOCATIONS
MICROSCOPY
(111)SI
LAYER
Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances
期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY
;
Zhao YW
;
Zeng YP
;
Duan ML
;
Sun WR
;
Jiao JH
;
Lin LY
收藏
  |  
浏览/下载:353/16
  |  
提交时间:2010/08/12
annealing
defects
etching
semiconducting indium phosphide
FE-DOPED INP
SEMIINSULATING INP
INDIUM-PHOSPHIDE
DEFECTS
DIFFUSION
CRYSTALS
WAFERS
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