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| The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914 作者: Jin P; Ye XL; Zhou XL 收藏  |  浏览/下载:53/4  |  提交时间:2011/07/05
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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016 Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW 收藏  |  浏览/下载:55/10  |  提交时间:2011/07/05
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| Quantitative surface enhanced Raman scattering detection based on the "sandwich" structure substrate 期刊论文 spectrochimica acta part a-molecular and biomolecular spectroscopy, 2011, 卷号: 79, 期号: 3, 页码: 625-630 作者: Tang AW 收藏  |  浏览/下载:83/5  |  提交时间:2011/07/15
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| Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文 chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202 作者: Jin P 收藏  |  浏览/下载:46/4  |  提交时间:2011/07/15
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| A complex Fourier transformation study of the contactless electroreflectance of an undoped-n(+) GaAs structure 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 6, 页码: 786-789 作者: Jin P 收藏  |  浏览/下载:51/0  |  提交时间:2010/04/11
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| Strong in-plane optical anisotropy of asymmetric (001) quantum wells 期刊论文 journal of applied physics, 2006, 卷号: 99, 期号: 9, 页码: art.no.096102 作者: Xu B; Ye XL 收藏  |  浏览/下载:40/0  |  提交时间:2010/04/11
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| Raman scattering detection of stacking faults in free-standing cubic-SiC epilayer 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 10, 页码: 2834-2837 Liu XF (Liu Xing-Fang); Sun GS (Sun Guo-Sheng); Li JM (Li Jin-Min); Zhao YM (Zhao Yong-Mei); Li JY (Li Jia-Ye); Wang L (Wang Lei); Zhao WS (Zhao Wan-Shun); Zeng YP (Zeng Yi-Ping) 收藏  |  浏览/下载:76/0  |  提交时间:2010/04/11
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| Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文 journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18 Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM 收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL; Xu B; Jin P 收藏  |  浏览/下载:92/0  |  提交时间:2010/04/11
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| Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
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