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科研机构
半导体研究所 [57]
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期刊论文 [47]
会议论文 [10]
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2011 [4]
2010 [1]
2007 [1]
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半导体材料 [57]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:70/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells
期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong
;
Zeng, Xiang-Bo
;
Peng, Wen-Bo
;
Yao, Wen-Jie
;
Xie, Xiao-Bing
;
Yang, Ping
;
Wang, Chao
;
Wang, Zhan-Guo
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  |  
浏览/下载:33/0
  |  
提交时间:2012/06/14
Amorphous films
Chemical vapor deposition
Energy gap
High resolution electron microscopy
High resolution transmission electron microscopy
Hydrogen
Nanocrystalline silicon
Optical band gaps
Plasma deposition
Plasma enhanced chemical vapor deposition
Raman spectroscopy
Semiconducting silicon compounds
Solar power generation
Thin films
Transmission electron microscopy
双纳米硅p层优化非晶硅太阳能电池
期刊论文
材料工程, 2011, 卷号: xx, 期号: 8, 页码: 5-7,13
作者:
杨萍
;
姚文杰
;
刘石勇
;
彭文博
;
谢小兵
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  |  
浏览/下载:37/0
  |  
提交时间:2012/07/17
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:
Song HP
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浏览/下载:72/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SEMICONDUCTOR NANOWIRES
NITRIDE NANOTUBES
GAN
EMISSION
MECHANISM
Structure and properties of InAs/AlAs quantum dots for broadband emission
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515
Meng XQ (Meng X. Q.)
;
Jin P (Jin P.)
;
Liang ZM (Liang Z. M.)
;
Liu FQ (Liu F. Q.)
;
Wang ZG (Wang Z. G.)
;
Zhang ZY (Zhang Z. Y.)
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浏览/下载:26/0
  |  
提交时间:2010/12/28
CHEMICAL-VAPOR-DEPOSITION
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118
作者:
Xu B
;
Ye XL
;
Jin P
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浏览/下载:75/0
  |  
提交时间:2010/03/29
INAS QUANTUM DOTS
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition
期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B
;
Shen H
;
Liang ZC
;
Chen Z
;
Kong GL
;
Liao XB
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  |  
浏览/下载:49/0
  |  
提交时间:2010/04/11
chemical vapour deposition
electrical properties and measurements
scanning electron microscopy
polycrystalline silicon
GRAIN-BOUNDARIES
STATES
Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 13, 页码: 3274-3279
Feng W
;
Li Y
;
Feng YY
;
Wu J
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  |  
浏览/下载:81/0
  |  
提交时间:2010/04/11
NONCOVALENT SIDEWALL-FUNCTIONALIZATION
PHOTOVOLTAIC DEVICES
POLYMER COMPOSITES
THIN-FILMS
DYE
IMMOBILIZATION
PHTHALOCYANINE
POLYANILINE
CELLS
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure
期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei)
;
Wang XL (Wang Xiaoliang)
;
Hu GX (Hu Guoxin)
;
Wang JX (Wang Junxi)
;
Li HP (Li Jianping)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:33/0
  |  
提交时间:2010/04/11
AlGaN/AlN/GaN
two-dimensional electron gas
MOCVD
ALGAN/GAN HETEROSTRUCTURES
POLARIZATION
TRANSISTORS
GANHEMTS
GAS
Influence of dislocation stress field on distribution of quantum dots
期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:
Xu B
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  |  
浏览/下载:58/0
  |  
提交时间:2010/04/11
stress
surface structure
semiconducting III-V materials
MOLECULAR-BEAM EPITAXY
STRAIN
THICKNESS
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