CORC

浏览/检索结果: 共57条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:  Wang C
收藏  |  浏览/下载:70/3  |  提交时间:2011/07/05
Optimization of double nanocrystalline silicon p-layers for amorphous silicon solar cells 期刊论文
cailiao gongcheng/journal of materials engineering, 2011, 期号: 8, 页码: 5-7+13
Liu, Shi-Yong; Zeng, Xiang-Bo; Peng, Wen-Bo; Yao, Wen-Jie; Xie, Xiao-Bing; Yang, Ping; Wang, Chao; Wang, Zhan-Guo
收藏  |  浏览/下载:33/0  |  提交时间:2012/06/14
双纳米硅p层优化非晶硅太阳能电池 期刊论文
材料工程, 2011, 卷号: xx, 期号: 8, 页码: 5-7,13
作者:  杨萍;  姚文杰;  刘石勇;  彭文博;  谢小兵
收藏  |  浏览/下载:37/0  |  提交时间:2012/07/17
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载:72/3  |  提交时间:2011/07/05
Structure and properties of InAs/AlAs quantum dots for broadband emission 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 10, 页码: art. no. 103515
Meng XQ (Meng X. Q.); Jin P (Jin P.); Liang ZM (Liang Z. M.); Liu FQ (Liu F. Q.); Wang ZG (Wang Z. G.); Zhang ZY (Zhang Z. Y.)
收藏  |  浏览/下载:26/0  |  提交时间:2010/12/28
Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 10, 页码: art.no.103118
作者:  Xu B;  Ye XL;  Jin P
收藏  |  浏览/下载:75/0  |  提交时间:2010/03/29
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
Enhanced photoresponse from the ordered microstructure of naphthalocyanine-carbon nanotube composite film 期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 13, 页码: 3274-3279
Feng W; Li Y; Feng YY; Wu J
收藏  |  浏览/下载:81/0  |  提交时间:2010/04/11
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:33/0  |  提交时间:2010/04/11
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载:58/0  |  提交时间:2010/04/11


©版权所有 ©2017 CSpace - Powered by CSpace