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科研机构
半导体研究所 [94]
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期刊论文 [87]
会议论文 [7]
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2012 [1]
2011 [5]
2010 [4]
2009 [6]
2008 [4]
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半导体材料 [94]
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Effect of growth temperature on surface morphology and structure of InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
期刊论文
journal of crystal growth, 2012, 卷号: 359, 页码: 55-59
Li LG (Li, Li-Gong)
;
Liu SM (Liu, Shu-Man)
;
Luo S (Luo, Shuai)
;
Yang T (Yang, Tao)
;
Wang LJ (Wang, Li-Jun)
;
Liu JQ (Liu, Jun-Qi)
;
Liu FQ (Liu, Feng-Qi)
;
Ye XL (Ye, Xiao-Ling)
;
Xu B (Xu, Bo)
;
Wang ZG (Wang, Zhan-Guo)
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  |  
浏览/下载:18/0
  |  
提交时间:2013/03/26
MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers
期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:
Jia CH
;
Song HP
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浏览/下载:119/2
  |  
提交时间:2011/07/05
Anisotropy
Crystal morphology
Metalorganic chemical vapor deposition
a-Plane InN
INDIUM NITRIDE
MOVPE GROWTH
CUBIC INN
SAPPHIRE
GAN
MBE
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:
Duan RF
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浏览/下载:86/4
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提交时间:2011/07/05
CL
PL
Stacking fault
HVPE
GaN
Nonpolar
CHEMICAL-VAPOR-DEPOSITION
ACCEPTOR PAIR EMISSION
PHASE EPITAXY
GROWN GAN
SEMICONDUCTORS
SAPPHIRE
FILMS
NITRIDE
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD
期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:
Song HP
;
Shi K
;
Sang L
;
Wei HY
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浏览/下载:58/3
  |  
提交时间:2011/07/05
Metal organic chemical vapor deposition
Sapphire
Zinc compounds
Semiconducting II-VI materials
VAPOR-PHASE EPITAXY
OPTICAL-PROPERTIES
ZNO NANORODS
RAMAN-SCATTERING
M-PLANE
FILMS
PHOTOLUMINESCENCE
DEPOSITION
NANOWIRES
FIELDS
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD
期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:
Song HP
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  |  
浏览/下载:69/3
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SEMICONDUCTOR NANOWIRES
NITRIDE NANOTUBES
GAN
EMISSION
MECHANISM
GaN grown with InGaN as a weakly bonded layer
期刊论文
crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585
作者:
Wei HY
;
Song HP
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  |  
浏览/下载:63/4
  |  
提交时间:2011/07/05
CHEMICAL-VAPOR-DEPOSITION
SI(001) SUBSTRATE
STRAIN
EPITAXY
Molecular beam epitaxy of GaSb on GaAs substrates with AlSb/GaSb compound buffer layers
期刊论文
thin solid films, 2010, 卷号: 519, 期号: 1, 页码: 228-230
Hao RT (Hao Ruiting)
;
Deng SK (Deng Shukang)
;
Shen LX (Shen Lanxian)
;
Yang PZ (Yang Peizhi)
;
Tu JL (Tu Jielei)
;
Liao H (Liao Hua)
;
Xu YQ (Xu Yingqiang)
;
Niu ZC (Niu Zhichuan)
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  |  
浏览/下载:41/0
  |  
提交时间:2010/12/28
Gallium Arsenide
Gallium antimonide
Gallium antimonide/Aluminum antimonide
Superlattices
Molecular Beam Epitaxy
VAPOR-PHASE EPITAXY
SURFACE-MORPHOLOGY
GROWTH
SUPERLATTICES
TEMPERATURE
RELAXATION
DETECTORS
GAAS(001)
MOCVD
FILMS
Blue-shift photoluminescence from porous InAlAs
期刊论文
semiconductor science and technology, 2010, 卷号: 25, 期号: 11, 页码: art. no. 115006
Jiang YC (Jiang Y. C.)
;
Liu FQ (Liu F. Q.)
;
Wang LJ (Wang L. J.)
;
Yin W (Yin W.)
;
Wang ZG (Wang Z. G.)
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  |  
浏览/下载:51/0
  |  
提交时间:2010/12/28
MACROPOROUS SILICON
PORE FORMATION
GAP
INP
AL0.48IN0.52AS
NANOSTRUCTURES
MORPHOLOGY
One-pot synthesis and self-assembly of colloidal copper(I) sulfide nanocrystals
期刊论文
nanotechnology, 2010, 卷号: 21, 期号: 28, 页码: art. no. 285602
Tang AW (Tang Aiwei)
;
Qu SC (Qu Shengchun)
;
Li K (Li Kai)
;
Hou YB (Hou Yanbing)
;
Teng F (Teng Feng)
;
Cao J (Cao Jie)
;
Wang YS (Wang Yongsheng)
;
Wang ZG (Wang Zhanguo)
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  |  
浏览/下载:218/43
  |  
提交时间:2010/07/18
BINARY NANOPARTICLE SUPERLATTICES
LIGHT-EMITTING-DIODES
SOLVENTLESS SYNTHESIS
CDSE NANOCRYSTALS
QUANTUM DOTS
MONODISPERSE NANOCRYSTALS
OPTICAL-PROPERTIES
CDTE NANOCRYSTALS
CU2S NANOCRYSTALS
SOLAR-CELLS
Substrate temperature dependence of ZnTe epilayers grown on GaAs(001) by molecular beam epitaxy
期刊论文
journal of crystal growth, 2010, 卷号: 312, 期号: 9, 页码: 1491-1495
Zhao J (Zhao Jie)
;
Zeng YP (Zeng Yiping)
;
Liu C (Liu Chao)
;
Li YB (Li Yanbo)
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  |  
浏览/下载:148/33
  |  
提交时间:2010/06/04
Reflection high-energy electron diffraction
Atomic force microscopy
Molecular beam epitaxy
Zinc compounds
Semiconducting II-VI materials
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