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科研机构
半导体研究所 [21]
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期刊论文 [19]
会议论文 [2]
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2010 [1]
2009 [4]
2008 [2]
2006 [3]
2005 [2]
2004 [1]
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半导体材料 [21]
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STUDY OF MICROSTRUCTURE AND DEFECTS IN HYDROGENATED MICROCRYSTALLINE SILICON FILMS
会议论文
34th ieee photovoltaic specialists conference, philadelphia, pa, 2009
Peng WB (Peng Wenbo)
;
Zeng XB (Zeng Xiangbo)
;
Liu SY (Liu Shiyong)
;
Xiao HB (Xiao Haibo)
;
Kong GL (Kong Guanglin)
;
Yu YD (Yu Yude)
;
Liao XB (Liao Xianbo)
收藏
  |  
浏览/下载:252/64
  |  
提交时间:2010/08/16
The structure, morphology and Raman scattering study on Mn-implanted nonpolar a-plane GaN films
期刊论文
materials science and engineering b-advanced functional solid-state materials, 2009, 卷号: 162, 期号: 3, 页码: 209-212
Sun LL
;
Yan FW
;
Zhang HX
;
Wang JX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:92/1
  |  
提交时间:2010/03/08
Ion implantation
Metal organic chemical vapour deposition (MOCVD)
Diluted magnetic semiconductor (DMS)
Nonpolar a-plane GaN
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates
期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL
;
Yan FW
;
Wang JX
;
Zhang HX
;
Zeng YP
;
Wang GH
;
Li JM
收藏
  |  
浏览/下载:55/1
  |  
提交时间:2010/03/08
ELECTRON-AFFINITY
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:
Jin P
;
Wei HY
;
Song HP
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  |  
浏览/下载:311/47
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
II-VI semiconductors
indium compounds
interface states
polarisation
semiconductor heterojunctions
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
zinc compounds
Determination of wurtzite InN/cubic In2O3 heterojunction band offset by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 22, 页码: art. no. 222114
作者:
Song HP
;
Wei HY
;
Zhang B
收藏
  |  
浏览/下载:198/0
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
semiconductor heterojunctions
semiconductor materials
valence bands
X-ray photoelectron spectra
Fracture Properties of LPCVD Silicon Nitride and Thermally Grown Silicon Oxide Thin Films From the Load-Deflection of Long Si3N4 and SiO2/Si3N4 Diaphragms
期刊论文
journal of microelectromechanical systems, 2008, 卷号: 17, 期号: 5, 页码: 1120-1134
Yang, JL
;
Gaspar, J
;
Paul, O
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  |  
浏览/下载:27/0
  |  
提交时间:2010/03/08
Bulge test
fracture
pooled Weibull analysis
silicon nitride (Si3N4)
silicon oxide (SiO2)
Valence band offset of InN/4H-SiC heterojunction measured by x-ray photoelectron spectroscopy
期刊论文
applied physics letters, 2008, 卷号: 93, 期号: 24, 页码: art. no. 242107
Zhang BL
;
Sun GS
;
Guo Y
;
Zhang PF
;
Zhang RQ
;
Fan HB
;
Liu XL
;
Yang SY
;
Zhu QS
;
Wang ZG
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  |  
浏览/下载:233/42
  |  
提交时间:2010/03/08
conduction bands
III-V semiconductors
indium compounds
interface states
semiconductor heterojunctions
silicon compounds
valence bands
wide band gap semiconductors
X-ray photoelectron spectra
MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
期刊论文
半导体学报, 2006, 卷号: 27, 期号: 9, 页码: 1521-1525
作者:
Xiao Hongling
;
Wang Cuimei
收藏
  |  
浏览/下载:12/0
  |  
提交时间:2010/11/23
Photoluminescence from C+ ion-implanted and electrochemical etched Si layers
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427
Shi LW (Shi Liwei)
;
Wang Q (Wang Qiang)
;
Li YG (Li Yuguo)
;
Xue CS (Xue Chengshan)
;
Zhuang HZ (Zhuang Huizhao)
收藏
  |  
浏览/下载:34/0
  |  
提交时间:2010/04/11
ion implantation
annealing
chemical etching
photoluminescence
POROUS SILICON
LUMINESCENCE
Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces
期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.)
;
Liu XF (Liu X. F.)
;
Gong QC (Gong Q. C.)
;
Wang L (Wang L.)
;
Zhao WS (Zhao W. S.)
;
Li JY (Li J. Y.)
;
Zeng YP (Zeng Y. P.)
;
Li JM (Li J. M.)
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
4H-SiC
homoepitaxial layers
surface morphological defect
optical microscopy
SILICON-CARBIDE
DISLOCATIONS
FILMS
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