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CORC

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Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801
作者:  Xu B
收藏  |  浏览/下载：52/3  |  提交时间：2011/07/05
Influence of thermal stress on the characteristic parameters of AlGaN/GaN heterostructure Schottky contacts 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 4, 页码: article no.47105
Lu YJ; Lin ZJ; Zhang Y; Meng LG; Cao ZF; Luan CB; Chen H; Wang ZG
收藏  |  浏览/下载：58/2  |  提交时间：2011/07/05
The influence of the InGaN back-barrier on the properties of Al(0.3)Ga(0.7)N/AlN/GaN/InGaN/GaN structure 期刊论文
european physical journal-applied physics, 2011, 卷号: 55, 期号: 1, 页码: 10102
Bi Y; Wang XL; Xiao HL; Wang CM; Peng EC; Lin DF; Feng C; Jiang LJ
收藏  |  浏览/下载：37/0  |  提交时间：2012/01/06
In-plane stray field induced spin-filtering in a two-dimensional electron gas under the modulation of surface ferromagnetic dual-gate 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073703
Wang Y (Wang Y.); Jiang Y (Jiang Y.); Zhang XW (Zhang X. W.); Yin ZG (Yin Z. G.)
收藏  |  浏览/下载：14/0  |  提交时间：2010/11/14
Gap states and microstructure of microcrystalline silicon thin films 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 8, 页码: 5716-5720
Peng WB; Liu SY; Xiao HB; Zhang CS; Shi MJ; Zeng XB; Xu YY; Kong GL; Yu YD
收藏  |  浏览/下载：87/3  |  提交时间：2010/03/08
Measurement of polar C-plane and nonpolar A-plane InN/ZnO heterojunctions band offsets by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 16, 页码: art. no. 163301
作者:  Jin P;  Wei HY;  Song HP
收藏  |  浏览/下载：312/47  |  提交时间：2010/03/08
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文
microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781
Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX
收藏  |  浏览/下载：97/1  |  提交时间：2010/03/08
Room-temperature spin-oriented photocurrent under near-infrared irradiation and comparison of optical means with Shubnikov de-Haas measurements in AlXGa1-XN/GaN heterostructures 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 7, 页码: art.no.071920
Tang YQ; Shen B; He XW; Han K; Tang N; Chen WH; Yang ZJ; Zhang GY; Chen YH; Tang CG; Wang ZG; Cho KS; Chen YF
收藏  |  浏览/下载：65/0  |  提交时间：2010/03/29
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates 期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.); Guo SL (Guo S. L.); Chu JH (Chu J. H.)
收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11
Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 762-765
Wang CM (Wang Cuimei); Wang XL (Wang Xiaoliang); Hu GX (Hu Guoxin); Wang JX (Wang Junxi); Li HP (Li Jianping); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11

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