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| Single Neutral Excitons Confined in AsBr3 In Situ Etched In GaAs Quantum Rings 期刊论文 journal of nanoelectronics and optoelectronics, 2011, 卷号: 6, 期号: 1, 页码: 51-57 Ding F; Li B; Akopian N; Perinetti U; Chen YH; Peeters FM; Rastelli A; Zwiller V; Schmidt OG 收藏  |  浏览/下载:72/5  |  提交时间:2011/07/05
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| Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell 期刊论文 半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28 作者: Liu Shiyong; Peng Wenbo 收藏  |  浏览/下载:13/0  |  提交时间:2010/11/23 |
| Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文 thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162 Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB 收藏  |  浏览/下载:48/0  |  提交时间:2010/04/11
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| Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate 期刊论文 nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744 Li C (Li Chun); Fang GJ (Fang Guojia); Su FH (Su Fuhai); Li GH (Li Guohua); Wu XG (Wu Xiaoguang); Zhao XZ (Zhao Xingzhong) 收藏  |  浏览/下载:36/0  |  提交时间:2010/04/11
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| Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载:44/0  |  提交时间:2010/04/11
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| Temperature-induced switching-over of the luminescence transitions in GaInNAs/GaAs quantum wells 期刊论文 chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 548-551 Bian LF; Jiang D; Liang XG; Lu SL 收藏  |  浏览/下载:41/18  |  提交时间:2010/03/09
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| The effects of rapid thermal annealing on the optical properties of Zn1-xMnxSe epilayer grown by MOCVD on GaAs substrate 期刊论文 journal of crystal growth, 2003, 卷号: 249, 期号: 3-4, 页码: 538-543 作者: Zhang JY; Jiang DS 收藏  |  浏览/下载:81/0  |  提交时间:2010/08/12
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Kang JY; Shen YW; Wang ZG 收藏  |  浏览/下载:15/0  |  提交时间:2010/11/15
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| Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers 期刊论文 materials science and engineering b-solid state materials for advanced technology, 2002, 卷号: 91, 期号: 0, 页码: 303-307 Kang JY; Shen YW; Wang ZG 收藏  |  浏览/下载:90/4  |  提交时间:2010/08/12
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| Dependence of optical properties on the structure of multi-layer self-organized InAs quantum dots emitting near 1.3 mu m 期刊论文 journal of crystal growth, 2002, 卷号: 243, 期号: 3-4, 页码: 432-438 作者: Jin P; Ye XL; Li CM; Xu B 收藏  |  浏览/下载:37/0  |  提交时间:2010/08/12
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