×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
半导体研究所 [36]
内容类型
期刊论文 [28]
会议论文 [8]
发表日期
2011 [2]
2009 [2]
2008 [1]
2006 [4]
2004 [3]
2003 [1]
更多...
学科主题
半导体材料 [36]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共36条,第1-10条
帮助
限定条件
学科主题:半导体材料
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519
Yu JL
;
Chen YH
;
Jiang CY
;
Liu Y
;
Ma H
收藏
  |  
浏览/下载:36/4
  |  
提交时间:2011/07/05
MOLECULAR-BEAM EPITAXY
INVERSION ASYMMETRY
HETEROSTRUCTURES
SEGREGATION
INTERFACE
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell
期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:
Liu Shiyong
;
Peng Wenbo
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/23
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
收藏
  |  
浏览/下载:104/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Effect of substrate temperature on the growth and photoluminescence properties of vertically aligned ZnO nanostructures
期刊论文
journal of crystal growth, 2006, 卷号: 292, 期号: 1, 页码: 19-25
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Fu Q (Fu Qiang)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/04/11
nanostructure
vapor phase transport
ZnO
semiconductor materials
PHYSICAL VAPOR-DEPOSITION
OPTICAL-PROPERTIES
THERMAL EVAPORATION
FIELD-EMISSION
NANOWIRES
NANORODS
MECHANISM
ARRAYS
High quality microcrystalline Si films by hydrogen dilution profile
期刊论文
thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455
Gu JH (Gu Jinhua)
;
Zhu MF (Zhu Meifang)
;
Wang LJ (Wang Liujiu)
;
Liu FZ (Liu Fengzhen)
;
Zhou BQ (Zhou Bingqing)
;
Ding K (Ding Kun)
;
Li GH (Li Guohua)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
microcrystalline Si thin film
hydrogen dilution profiling
incubation layer
uniformity
CHEMICAL-VAPOR-DEPOSITION
THIN
ALLOYS
CVD
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
收藏
  |  
浏览/下载:95/18
  |  
提交时间:2010/03/29
ZnO
MOCVD
thermal annealing
photoluminescence
x-ray diffraction
atomic force microscopy
PULSED-LASER DEPOSITION
THIN-FILMS
PHOTOLUMINESCENCE
MECHANISMS
EPITAXY
CVD
SI
Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338
作者:
Zhang Y
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/04/11
resonant tunnelling diode
InP substrate
molecular beam epitaxy
high resolution transmission electron microscope
CURRENT-VOLTAGE CHARACTERISTICS
INTRINSIC BISTABILITY
CIRCUIT
Formation of ferromagnetic clusters in GaAs matrix and GaAs/AlGaAs superlattice through Mn ion implantation at two different temperatures
期刊论文
journal of crystal growth, 2004, 卷号: 268, 期号: 1-2, 页码: 12-17
Wang CH
;
Chen YH
;
Yu G
;
Wang ZG
收藏
  |  
浏览/下载:264/86
  |  
提交时间:2010/03/09
nanomaterials
©版权所有 ©2017 CSpace - Powered by
CSpace