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CORC

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Growth of nonpolar a-plane GaN on nano-patterned r-plane sapphire substrates 期刊论文
applied surface science, 2009, 卷号: 255, 期号: 6, 页码: 3664-3668
Gao HY; Yan FW; Zhang Y; Li JM; Zeng YP; Wang JX
收藏  |  浏览/下载：165/24  |  提交时间：2010/03/08
Boron-doped silicon film as a recombination layer in the tunnel junction of a tandem solar cell 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 6, 页码: 25-28
作者:  Liu Shiyong;  Peng Wenbo
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29
2DEG  
The structural and photoluminescence character of InAs quantum dots grown on a combined InAlAs and GaAs strained buffer 期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1791-1794
Shi, GX; Xu, B; Jin, P; Ye, XL; Cui, CX; Zhang, CL; Wu, J; Wang, ZG
收藏  |  浏览/下载：25/0  |  提交时间：2010/03/17
Single Layer Growth of Strained Epitaxy at Low Temperature 期刊论文
半导体学报, 2003, 卷号: 24, 期号: 4, 页码: 362-365
作者:  Duan Ruifei;  Duan Ruifei
收藏  |  浏览/下载：11/0  |  提交时间：2010/11/23
In0.25Ga0.75As growth on low-temperature thin buffer layers formed on GaAs (001) substrate 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 126-130
作者:  Xu B
收藏  |  浏览/下载：56/0  |  提交时间：2010/08/12
Effect of in situ thermal treatment during growth on crystal quality of GaN epilayer grown on sapphire substrate by MOVPE 期刊论文
journal of crystal growth, 2001, 卷号: 222, 期号: 1-2, 页码: 110-117
Xu HZ; Takahashi K; Wang CX; Wang ZG; Okada Y; Kawabe M; Harrison I; Foxon CT
收藏  |  浏览/下载：54/0  |  提交时间：2010/08/12
Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 期刊论文
thin solid films, 2000, 卷号: 368, 期号: 2, 页码: 279-282
作者:  Zhao DG
收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12
Analysis of atomic force microscopic results of InAs islands formed by molecular beam epitaxy 期刊论文
journal of crystal growth, 1998, 卷号: 192, 期号: 3-4, 页码: 376-380
作者:  Xu B
收藏  |  浏览/下载：35/0  |  提交时间：2010/08/12

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