CORC

浏览/检索结果: 共5条,第1-5条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO 期刊论文
Chinese Physics B, 2017, 卷号: 26, 期号: 10, 页码: 107101
作者:  Zhan-Wei Shen;  Feng Zhang;  Sima Dimitrijev;  Ji-Sheng Han;  Guo-Guo Yan
收藏  |  浏览/下载:37/0  |  提交时间:2018/06/15
Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition 期刊论文
Chinese Physics B, 2016, 卷号: 25, 期号: 12, 页码: 128104
Li-Xin Tian; Feng Zhang; Zhan-Wei Shen; Guo-Guo Yan; Xing-Fang Liu; Wan-Shun Zhao; Lei Wang; Guo-Sheng Sun; Yi-Ping Zeng
收藏  |  浏览/下载:24/0  |  提交时间:2017/03/10
Defect revelation and evaluation of 4H silicon carbide by optimized molten KOH etching method 期刊论文
materials science forum, 2013, 页码: 740-742
Lin Dong; Liu Zheng; Xingfang Liu
收藏  |  浏览/下载:8/0  |  提交时间:2014/05/16
Structure and magnetic properties of ScFe6Ga6-type RCo5Ga7 (R = Y, Tb, Dy, Ho and Er) 期刊论文
journal of solid state chemistry, 2004, 卷号: 177, 期号: 11, 页码: 4341-4345
Chang H; Guo YQ; Yang LT; Liua, QL; Feng WC; Liang JK; Rao GH
收藏  |  浏览/下载:48/0  |  提交时间:2010/03/17
Ti薄膜与AlN陶瓷的界面反应 期刊论文
物理学报, 1998, 卷号: 47, 期号: 1, 页码: 75
王佑祥; 岳瑞峰; 陈春华
收藏  |  浏览/下载:10/0  |  提交时间:2010/11/23


©版权所有 ©2017 CSpace - Powered by CSpace