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Design and fabrication of a 1-by-4 multimode interference splitter 期刊论文
proceedings of spie - the international society for optical engineering, 2012, 卷号: 8267, 页码: 826719
Ma, Li; Hongliang, Zhu; Minghua, Chen
收藏  |  浏览/下载：11/0  |  提交时间：2013/05/07
Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010
作者:  Yang T;  Yang XG;  Wang KF
收藏  |  浏览/下载：66/2  |  提交时间：2011/07/05
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：54/5  |  提交时间：2011/07/05
Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145
作者:  Duan RF
收藏  |  浏览/下载：101/4  |  提交时间：2011/07/05
Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112
作者:  Shi K;  Jiao CM;  Song HP
收藏  |  浏览/下载：94/7  |  提交时间：2011/07/05
Design and fabrication of a1-by-4 multimode interference splitter based on InP 期刊论文
proceedings of spie- the international society for optical engineering, 2011, 卷号: 8307, 页码: 83072m
Li, Ma; Zhang, Can; Zhu, Hongliang; Chen, Minghua
收藏  |  浏览/下载：17/0  |  提交时间：2012/06/14
Investigation of structural and optical anisotropy of m-plane InN films grown on gamma-LiAlO(2)(100) by metal organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2011, 卷号: 44, 期号: 24, 页码: 245402
Fu D; Zhang R; Liu B; Xie ZL; Xiu XQ; Gu SL; Lu H; Zheng YD; Chen YH; Wang ZG
收藏  |  浏览/下载：13/0  |  提交时间：2012/02/06
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：20/0  |  提交时间：2011/09/14
Effect of AlN buffer thickness on GaN epilayer grown on Si(1 1 1) 期刊论文
materials science in semiconductor processing, 2011, 卷号: 14, 期号: 2, 页码: 97-100
Wei, M; Wang, XL; Pan, X; Xiao, HL; Wang, CM; Hou, QF; Wang, ZG
收藏  |  浏览/下载：27/0  |  提交时间：2012/01/06

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