CORC

在结果中检索

CORC

浏览/检索结果: 共35条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载：22/0  |  提交时间：2011/09/14
Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 464-467
作者:  Pan X
收藏  |  浏览/下载：82/5  |  提交时间：2011/07/05
The structural, morphological and magnetic characteristics of Mn-implanted nonpolar a-plane GaN films 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 1, 页码: 91-93
Sun LL; Yan FW; Wang JX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载：220/46  |  提交时间：2010/03/08
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载：72/3  |  提交时间：2010/03/08
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 503-506
Yu, LK; Xu, B; Wang, ZG; Jin, P; Zhao, C; Lei, W; Sun, J; Hu, LJ
收藏  |  浏览/下载：26/1  |  提交时间：2010/03/08
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载：22/0  |  提交时间：2010/04/11
Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载：51/0  |  提交时间：2010/04/11
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11
Temperature dependence of surface quantum dots grown under frequent growth interruption 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 207-210
作者:  Jin P;  Xu B
收藏  |  浏览/下载：37/0  |  提交时间：2010/04/11

©版权所有 ©2017 CSpace - Powered by CSpace