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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：半导体材料    内容类型：期刊论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of the1st AlN and the2nd GaN layers on properties of AlGaN/2nd AlN/2nd GaN/1st AlN/1st GaN structure 期刊论文 applied physics a: materials science and processing, 2011, 卷号: 104, 期号: 4, 页码: 1211-1216 Bi, Yang; Wang, XiaoLiang; Yang, CuiBai; Xiao, HongLing; Wang, CuiMei; Peng, EnChao; Lin, DeFeng; Feng, Chun; Jiang, LiJuan, 收藏  |  浏览/下载：16/0  |  提交时间：2012/06/14 Poisson equation   Simulation of electrical properties of InxAl1- XN/AlN/GaN high electron mobility transistor structure 期刊论文 journal of semiconductors, 2011, 卷号: 32, 期号: 8, 页码: 83003 Bi, Yang; Wang, Xiaoliang; Xiao, Hongling; Wang, Cuimei; Yang, Cuibai; Peng, Enchao; Lin, Defeng; Feng, Chun; Jiang, Lijuan, 收藏  |  浏览/下载：14/0  |  提交时间：2012/06/14 Aluminum  Electron mobility  Gallium nitride  High electron mobility transistors  Indium  Poisson equation  Polarization  Two dimensional electron gas   The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure 期刊论文 microelectronics journal, 2008, 卷号: 39, 期号: 5, 页码: 777-781 Guo, LC; Wang, XL; Wang, CM; Mao, HL; Ran, JX; Luo, WJ; Wang, XY; Wang, BZ; Fang, CB; Hu, GX 收藏  |  浏览/下载：100/1  |  提交时间：2010/03/08 GaN  HEMT  2DEG  mobility  polarization   Theoretical analysis of gate voltage-controlled subband states in an AlxGa1-xN/GaN heterostructure 期刊论文 physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 3, 页码: 230-236 Han, XX; Li, JM; Wu, JJ; Cong, GW; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：40/16  |  提交时间：2010/03/17 two-dimensional electron gas   Concentration effect of Mn2+ on the photoluminescence of ZnS : Mn nanocrystals 期刊论文 journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 454-460 Peng WQ; Qu SC; Cong GW; Wang ZG 收藏  |  浏览/下载：39/20  |  提交时间：2010/03/17 doping   Effect of spontaneous and piezoelectric polarization on intersubband transition in AlxGa1-xN-GaN quantum well 期刊论文 journal of vacuum science & technology b, 2004, 卷号: 22, 期号: 6, 页码: 2568-2573 Li, JM; Lu, YW; Li, DB; Han, XX; Zhu, QS; Liu, XL; Wang, ZG 收藏  |  浏览/下载：16/0  |  提交时间：2010/03/17 RAY PHOTOEMISSION SPECTROSCOPY   Dislocation scattering in a two-dimensional electron gas of an AlxGa1-xN/GaN heterostructure 期刊论文 physica status solidi b-basic research, 2004, 卷号: 241, 期号: 13, 页码: 3000-3008 作者:  Han XX;  Li DB 收藏  |  浏览/下载：118/32  |  提交时间：2010/03/09 FIELD-EFFECT TRANSISTORS