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| Anomalous Temperature Dependence of Photoluminescence in InAs/InAlGaAs/InP Quantum Wire and Dot Hybrid Nanostructures 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 2, 页码: article no.27801 作者: Xu B 收藏  |  浏览/下载:51/3  |  提交时间:2011/07/05
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| Comparison of as-grown and annealed GaN/InGaN:Mg samples 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 34, 页码: 345101 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Lin DF; Jiang LJ; Feng C; Li JM; Wang ZG; Hou X 收藏  |  浏览/下载:18/0  |  提交时间:2012/01/06
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| Depolarization blueshift in intersubband transitions of triangular quantum wires 期刊论文 journal of applied physics, 2009, 卷号: 106, 期号: 11, 页码: art. no. 113712 作者: Song HP; Zhang B 收藏  |  浏览/下载:32/0  |  提交时间:2010/04/04
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| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文 applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720 Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP 收藏  |  浏览/下载:83/25  |  提交时间:2010/03/08
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| Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文 journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706 作者: Ye XL; Xu B; Jin P 收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
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| Study of GaN thin films grown on vicinal SiC (0001) substrates by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2002, 卷号: 17, 期号: 9, 页码: 957-960 Lu LW; Yan H; Yang CL; Xie MH; Wang ZG; Wang J; Ge WK 收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
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| Surface morphology of ion-beam deposited carbon films under high temperature 期刊论文 journal of vacuum science & technology a-vacuum surfaces and films, 2002, 卷号: 20, 期号: 6, 页码: 2072-2074 Liao MY; Chai CL; Yang SY; Liu ZK; Qin FG; Wang ZG 收藏  |  浏览/下载:52/0  |  提交时间:2010/08/12
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| Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands 期刊论文 journal of crystal growth, 2001, 卷号: 223, 期号: 3, 页码: 363-368 Wang XD; Niu ZC; Feng SL; Miao ZH 收藏  |  浏览/下载:94/3  |  提交时间:2010/08/12
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| Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 193-197 作者: Xu B 收藏  |  浏览/下载:51/0  |  提交时间:2010/08/12
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| p-type co-doping study of GaN by photoluminescence 期刊论文 journal of crystal growth, 1999, 卷号: 197, 期号: 1-2, 页码: 368-371 Zhang JP; Sun DZ; Wang XL; Kong MY; Zeng YP; Li JM; Lin LY 收藏  |  浏览/下载:35/0  |  提交时间:2010/08/12
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