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科研机构
半导体研究所 [35]
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会议论文 [35]
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2010 [2]
2008 [5]
2007 [1]
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半导体材料 [35]
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学科主题:半导体材料
内容类型:会议论文
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Study on Broadband Emitting Self-Assembled Quantum-Dot Material and Devices
会议论文
3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010
Jin P (Jin P.)
;
Lv XQ (Lv X. Q.)
;
Liu N (Liu N.)
;
Zhang ZY (Zhang Z. Y.)
;
Wang ZG (Wang Z. G.)
收藏
  |  
浏览/下载:33/0
  |  
提交时间:2010/11/01
SUPERLUMINESCENT DIODES
Ordered FePt Nanoparticle Arrays Prepared by a Micellar Method
会议论文
3rd ieee international nanoelectronics conference, hong kong, peoples r china, jan 03-08, 2010
Gao Y (Gao Y.)
;
Zhang XW (Zhang X. W.)
;
Qu S (Qu S.)
;
You JB (You J. B.)
;
Yin ZG (Yin Z. G.)
;
Chen NF (Chen N. F.)
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/11/01
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Yan, JC
;
Wang, JX
;
Liu, Z
;
Liu, NX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
DIODES
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH
;
Wang, XL
;
Xiao, HL
;
Feng, C
;
Wang, XY
;
Wang, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2010/03/09
GAS SENSORS
HEMT STRUCTURES
MOBILITY
TEMPERATURE
TRANSISTORS
GROWTH
MOCVD
LAYER
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
Combined transparent electrodes for high power GaN-based LEDs with long life time
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Wang, LC
;
Yi, XY
;
Wang, XD
;
Wang, GH
;
Li, JM
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2010/03/09
LIGHT-EMITTING-DIODES
EFFICIENCY
High epitaxial growth rate of 4H-SiC using TCS as silicon precursor
会议论文
9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008
Ji, G
;
Sun, GS
;
Ning, J
;
Liu, XF
;
Zhao, YM
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/03/09
Homoepitaxial growth of 4H-SiC multi-epilayers and its application to UV detection
会议论文
6th european conference on silicon carbide and related materials, newcastle upon tyne, england, sep, 2006
Liu, XF (Liu, X. F.)
;
Sun, GS (Sun, G. S.)
;
Zhao, YM (Zhao, Y. M.)
;
Ning, J (Ning, J.)
;
Li, JY (Li, J. Y.)
;
Wang, L (Wang, L.)
;
Zhao, WS (Zhao, W. S.)
;
Luo, MC (Luo, M. C.)
;
Li, JM (Li, J. M.)
收藏
  |  
浏览/下载:103/26
  |  
提交时间:2010/03/29
homoepitaxy
4H-SiC
multi-epilayer
UV detection
p(+)-pi-n(-)
ULTRAVIOLET PHOTODETECTOR
EPITAXIAL-GROWTH
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, CM
;
Wang, XL
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:120/30
  |  
提交时间:2010/03/29
HIGH BREAKDOWN VOLTAGE
MOBILITY TRANSISTORS
HETEROSTRUCTURES
SAPPHIRE
GANHEMTS
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Wang, XL
;
Wang, CM
;
Hu, GX
;
Wang, JX
;
Li, JP
收藏
  |  
浏览/下载:154/51
  |  
提交时间:2010/03/29
MOLECULAR-BEAM EPITAXY
2-DIMENSIONAL ELECTRON-GAS
BULK GAN
OPTIMIZATION
LAYERS
HEMTS
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