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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 GAS SENSORS  HEMT STRUCTURES  MOBILITY  TEMPERATURE  TRANSISTORS  GROWTH  MOCVD  LAYER   AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文 34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007 Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM 收藏  |  浏览/下载：47/0  |  提交时间：2010/03/09 PERFORMANCE  HETEROSTRUCTURES  OPTIMIZATION  MOBILITY   Recent research results on deep level defects in semi-insulating InP - Application to improve material quality 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Zhao, YW (Zhao, Youwen); Dong, ZY (Dong, Zhiyuan); Dong, HW (Dong, Hongwei); Sun, NF (Sun, Niefeng); Sun, TN (Sun, Tongnian) 收藏  |  浏览/下载：63/12  |  提交时间：2010/03/29 STIMULATED CURRENT SPECTROSCOPY  CURRENT TRANSIENT SPECTROSCOPY  FE-DOPED INP  POINT-DEFECTS  COMPENSATION  TEMPERATURE  DONORS  TRAPS   Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文 10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002 Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ 收藏  |  浏览/下载：14/0  |  提交时间：2010/11/15 PIEZOELECTRIC FIELD  PHOTOLUMINESCENCE  TEMPERATURE   Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers 会议论文 9th international conference on defects: recognition, imaging and physics in semiconductors (drip ix), rimini, italy, sep 24-28, 2001 Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY 收藏  |  浏览/下载：16/0  |  提交时间：2010/11/15 indium phosphide  semi-insulating  annealing  PICTS  photoluminescence  SEMIINSULATING INP  INDIUM-PHOSPHIDE  FE  PHOTOLUMINESCENCE  TEMPERATURE   High quality hydrogenated amorphous silicon films with significantly improved stability 会议论文 symposium on amorphous and microcrystalline silicon technology-1998, at the mrs spring meeting, san francisco, ca, apr 14-17, 1998 Sheng SR; Liao XB; Ma ZX; Yue GZ; Wang YQ; Kong GL 收藏  |  浏览/下载：20/0  |  提交时间：2010/10/29 A-SI-H  LIGHT SOAKING  PHOTOCONDUCTIVITY  INCREASE