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The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文
aip advances, 2016, 卷号: 6, 页码: 035124
P. Chen; D. G. Zhao; D. S. Jiang; J. J. Zhu; Z. S. Liu; J. Yang; X. Li; L. C. Le; X. G. He; W. Liu; X. J. Li; F. Liang; B. S. Zhang; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：24/0  |  提交时间：2017/03/10
Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
journal of alloys and compounds, 2015, 卷号: 625, 页码: 266–270
W. Liu; D.G. Zhao; D.S. Jiang; P. Chen; Z.S. Liu; J.J. Zhu; M. Shi; D.M. Zhao; X. Li; J.P. Liu; S.M. Zhang; H. Wang; H. Yang
收藏  |  浏览/下载：26/0  |  提交时间：2016/03/23
Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
journal of applied physics, 2015, 卷号: 117, 页码: 055709
J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; H. Yang; Y. T. Zhang; G. T. Du
收藏  |  浏览/下载：16/0  |  提交时间：2016/03/23
Thickness-dependent Raman spectra, transport properties and infrared photoresponse of few-layer black phosphorus 期刊论文
journal of materials chemistry c, 2015, 期号: 3, 页码: 10974-10980
Sijie Liu; Nengjie Huo; Sheng Gan; Yan Li; Zhongming Wei; Beiju Huang; Jian Liu; Jingbo Li; Hongda Chen
收藏  |  浏览/下载：31/0  |  提交时间：2016/03/23
The significant effect of the thickness of Ni film on the performance of the Ni/Au Ohmic contact to p-GaN 期刊论文
journal of applied physics, 2014, 卷号: 116, 期号: 16, 页码: 163708
Li, X. J.; Zhao, D. G.; Jiang, D. S.; Liu, Z. S.; Chen, P.; Zhu, J. J.; Le, L. C.; Yang, J.; He, X. G.; Zhang, S. M.; Zhang, B. S.; Liu, J. P.; Yang, H.
收藏  |  浏览/下载：19/0  |  提交时间：2015/03/19
Effect of V-defects on the performance deterioration of InGaN_GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness 期刊论文
journal of applied physics, 2013, 卷号: 114, 期号: 14, 页码: 143706
Le, L. C.; Zhao, D. G.; Jiang, D. S.; Li, L.; Wu, L. L.; Chen, P.; Liu, Z. S.; Yang, J.; Li, X. J.; He, X. G.; Zhu, J. J.; Wang, H.; Zhang, S. M.; Yang, H.
收藏  |  浏览/下载：11/0  |  提交时间：2014/04/09
The effects of InGaN layer thickness on the performance of InGaN_GaN p–i–n solar cells 期刊论文
Chin. Phys. B, 2013, 卷号: 22, 期号: 6, 页码: 068802
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
收藏  |  浏览/下载：12/0  |  提交时间：2014/04/09
The effects of InGaN layer thickness on the performance of InGaN/GaN p - I - N solar cells 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 6, 页码: 068802
Li Liang, Zhao De-Gang, Jiang De-Sheng, Liu Zong-Shun, Chen Ping, Wu Liang-Liang, Le Ling-Cong, Wang Hui, Yang Hui
收藏  |  浏览/下载：10/0  |  提交时间：2014/05/08
Theoretical investigation on the absorption enhancement of the crystalline silicon solar cells by pyramid texture coated with SiNx:H layer 期刊论文
solar energy, 2011, 卷号: 85, 期号: 3, 页码: 530-537
Zhao L; Zuo YH; Zhou CL; Li HL; Diao HW; Wang WJ
收藏  |  浏览/下载：57/9  |  提交时间：2011/07/05
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k center dot p model 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 3, 页码: article no.30507
Yu X; Gu YX; Wang Q; Wei X; Chen LH
收藏  |  浏览/下载：65/4  |  提交时间：2011/07/06

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