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科研机构
半导体研究所 [21]
内容类型
期刊论文 [16]
会议论文 [5]
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2011 [2]
2010 [3]
2009 [1]
2008 [3]
2006 [6]
2005 [1]
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光电子学 [21]
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Structure, Stress State and Piezoelectric Property of GaN Nanopyramid Arrays
期刊论文
applied physics express, 2011, 卷号: 4, 期号: 4, 页码: article no.45001
Liu JQ
;
Wang JF
;
Gong XJ
;
Huang J
;
Xu K
;
Zhou TF
;
Zhong HJ
;
Qiu YX
;
Cai DM
;
Ren GQ
;
Yang H
收藏
  |  
浏览/下载:74/3
  |  
提交时间:2011/07/05
OUTPUT VOLTAGE
NANOWIRES
NANOGENERATORS
GROWTH
Improved performance of UV-LED by p-AlGaN with graded composition
期刊论文
physica status solidi(c) current topics in solid state physics, 2011, 卷号: 8, 期号: 2, 页码: 461-463
Yan, Jianchang
;
Wang, Junxi
;
Cong, Peipei
;
Sun, Lili
;
Liu, Naixin
;
Liu, Zhe
;
Zhao, Chao
;
Li, Jinmin
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2012/06/14
Atomic force microscopy
Diffraction
Electroluminescence
Gallium
Metallorganic chemical vapor deposition
Organic chemicals
Organic light emitting diodes(OLED)
Organometallics
Structure(composition)
Ultraviolet radiation
X ray diffraction
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin)
;
Zhu JJ (Zhu Jian-Jun)
;
Chen GF (Chen Gui-Feng)
;
Zhang SM (Zhang Shu-Ming)
;
Jiang DS (Jiang De-Sheng)
;
Liu ZS (Liu Zong-Shun)
;
Zhao DG (Zhao De-Gang)
;
Wang H (Wang Hui)
;
Wang YT (Wang Yu-Tian)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:130/4
  |  
提交时间:2010/04/13
GaN
Si (111) substrate
metalorganic chemical vapour deposition
AlN buffer layer
AlGaN interlayer
: VAPOR-PHASE EPITAXY
CRACK-FREE GAN
STRESS-CONTROL
SI(111)
DEPOSITION
ALXGA1-XN
FILM
Frequency-Pushing Effect in Single-Mode Diode Laser Subject to External Dual-Beam Injection
期刊论文
ieee journal of quantum electronics, 2010, 卷号: 46, 期号: 5, 页码: 796-803
作者:
Wang LX
;
Ke JH
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  |  
浏览/下载:73/6
  |  
提交时间:2011/07/05
Dual lasers
four-wave mixing
frequency-pushing effect
injection-locked diode laser
optical frequency conversion
SMALL-SIGNAL ANALYSIS
CAVITY SEMICONDUCTOR-LASERS
OPTICAL-INJECTION
NONLINEAR DYNAMICS
LIGHT INJECTION
CONVERSION
LOCKING
MODULATION
BANDWIDTH
FEEDBACK
Effects of GaN Capping on the Structural and the Optical Properties of InN Nanostructures Grown by Using MOCVD
期刊论文
journal of the korean physical society, 2010, 卷号: 57, 期号: 1, 页码: 128-132
Sun YP (Sun Yuanping)
;
Sun Y (Sun Yuanping)
;
Cho YH (Cho Yong-Hoon)
;
Wang H (Wang Hui)
;
Wang LL (Wang Lili)
;
Zhang SM (Zhang Shuming)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:514/2
  |  
提交时间:2010/08/17
InN
Burstein-Moss effect
Quantum confinement effect
Activation energy
FUNDAMENTAL-BAND GAP
WELL STRUCTURES
EMISSION
SINGLE
Revised ab initio natural band offsets of all group IV, II-VI, and III-V semiconductors
期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 21, 页码: art. no. 212109
作者:
Li JB
收藏
  |  
浏览/下载:114/0
  |  
提交时间:2010/03/08
ab initio calculations
band structure
cadmium compounds
III-V semiconductors
II-VI semiconductors
IV-VI semiconductors
zinc compounds
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
收藏
  |  
浏览/下载:43/0
  |  
提交时间:2010/03/09
AlGaN
GaN template
A1N interlayer
MOCVD
crack
interference fringes
Study of Si/SiO2 hybrid antireflective coatings on SLD prepared by DSEBET - art. no. 69842P
会议论文
6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007
Sun, MX
;
Tan, MQ
;
Zhao, M
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
antireflective coatings
superluminescent diodes
double source electron beam evaporation technology
Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050
作者:
Zhang SM
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  |  
浏览/下载:84/0
  |  
提交时间:2010/04/11
nitrides
multiple quantum wells
cracks
dislocations
vacancies x-ray diffraction
X-RAY-DIFFRACTION
EDGE DISLOCATIONS
GAN
FILMS
SUPERLATTICES
RELAXATION
STRAIN
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