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科研机构
半导体研究所 [10]
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期刊论文 [7]
会议论文 [3]
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2014 [1]
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光电子学 [10]
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Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties
期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 7, 页码: 076801
Liang, JR
;
Wu, MJ
;
Hu, M
;
Liu, J
;
Zhu, NW
;
Xia, XX
;
Chen, HD
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浏览/下载:24/0
  |  
提交时间:2015/03/25
Fabrication of Silicon-Based Template-Assisted Nanoelectrode Arrays and Ohmic Contact Properties Investigation
期刊论文
journal of nanoscience and nanotechnology, 2010, 卷号: 10, 期号: 11 sp. iss. si, 页码: 7428-7431
Bai AQ (Bai Anqi)
;
Cheng BW (Cheng Buwen)
;
Wang XF (Wang Xiaofeng)
;
Xue CL (Xue Chunlai)
;
Zuo YH (Zuo Yuhua)
;
Wang QM (Wang Qiming)
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2010/11/30
ANODIC ALUMINA FILMS
NANOWIRE ARRAYS
POROUS ALUMINA
NANOCRYSTALS
PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS
期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 6, 页码: 457-460
作者:
Li GK
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  |  
浏览/下载:50/3
  |  
提交时间:2011/07/05
vanadium dioxide thin film
infrared transmission spectrum
rapid elevating temperatue
THIN-FILMS
VO2 FILMS
TEMPERATURE
FABRICATION
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao)
;
Tatebayashi J (Tatebayashi, Jun)
;
Aoki K (Aoki, Kanna)
;
Nishioka M (Nishioka, Masao)
;
Arakawa Y (Arakawa, Yasuhiko)
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  |  
浏览/下载:58/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Ye XL (Ye X. L.)
;
Wang W (Wang W.)
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  |  
浏览/下载:40/0
  |  
提交时间:2010/04/11
photoluminescence
quantum dots
indium arsenide
1.3 MU-M
CHEMICAL-VAPOR-DEPOSITION
PHASE-EPITAXY
GAAS
LUMINESCENCE
SUBSTRATE
ISLANDS
DENSITY
LASERS
LAYER
Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well
期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 521-523
作者:
Xu YQ
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浏览/下载:65/21
  |  
提交时间:2010/03/09
MOLECULAR-BEAM EPITAXY
Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing
会议论文
asia-pacific optical and wireless communications conference (apoc 2001), beijing, peoples r china, nov 12-15, 2001
作者:
Xu YQ
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  |  
浏览/下载:22/0
  |  
提交时间:2010/10/29
MOLECULAR-BEAM EPITAXY
MU-M
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Pan Z
;
Li LH
;
Zhang W
;
Wang XU
;
Lin YW
;
Wu RH
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  |  
浏览/下载:14/0
  |  
提交时间:2010/11/15
adsorption
characterization
radiation
molecular beam epitaxy
nitrides
SURFACE-EMITTING LASER
QUANTUM-WELLS
OPERATION
RANGE
Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation
期刊论文
ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5
Jie WZ
;
Jin CS
;
Fan Z
;
Jie WX
;
Wei W
;
Han WR
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
CVD
insulation
leakage currents
oxidation
quantum-well lasers
semiconductor heterojunctions
thermal factors
DIODES
LEAKAGE CURRENT
Design and fabrication of GaAs OMIST photodetector
会议论文
conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998
Kang XJ
;
Lin SM
;
Liao QW
;
Gao JH
;
Liu SA
;
Cheng P
;
Wang HJ
;
Zhang CH
;
Wang QM
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2010/10/29
photodetector
oxidation
materials growth
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