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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Metamorphic InGaAs p-i-n Photodetectors with 1.75 mu m Cut-Off Wavelength Grown on GaAs 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 3, 页码: art. no. 038504 Zhu B (Zhu Bin); Han Q (Han Qin); Yang XH (Yang Xiao-Hong); Ni HQ (Ni Hai-Qiao); He JF (He Ji-Fang); Niu ZC (Niu Zhi-Chuan); Wang X (Wang Xin); Wang XP (Wang Xiu-Ping); Wang J (Wang Jie) 收藏  |  浏览/下载：125/5  |  提交时间：2010/04/22 MOLECULAR-BEAM EPITAXY  BUFFER LAYERS  DARK CURRENT  PHOTODIODES  LASERS   Multimode resonances in metallically confined square-resonator microlasers 期刊论文 applied physics letters, 2010, 卷号: 96, 期号: 5, 页码: art. no. 051104 Che KJ (Che Kai-Jun); Yang YD (Yang Yue-De); Huang YZ (Huang Yong-Zhen) 收藏  |  浏览/下载：186/14  |  提交时间：2010/04/13 aluminium compounds  finite difference time-domain analysis  gallium compounds  III-V semiconductors  indium compounds  laser cavity resonators  photolithography  refractive index  sputter etching  DIRECTIONAL EMISSION  MICRODISK LASERS  MODES   Optical analysis of AlGaInP laser diodes with real refractive index guided self-aligned structure 会议论文 asia-pacific optical and wireless communications conference (apoc 2003), wuhan, peoples r china, nov 04-06, 2003 Xu Y; Zhu XP; Ye XJ; Kang XN; Cao Q; Guo L; Chen LH 收藏  |  浏览/下载：17/1  |  提交时间：2010/10/29 finite-difference methods  AlGaInP laser diodes  RISA  OPERATION  LAYER  NM   Single-mode condition for silicon rib waveguides with trapezoidal cross-section 期刊论文 optics communications, 2004, 卷号: 230, 期号: 4-6, 页码: 253-257 Xia, JS; Yu, JZ 收藏  |  浏览/下载：189/63  |  提交时间：2010/03/09 single-mode condition   Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation 期刊论文 ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5 Jie WZ; Jin CS; Fan Z; Jie WX; Wei W; Han WR 收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12 CVD  insulation  leakage currents  oxidation  quantum-well lasers  semiconductor heterojunctions  thermal factors  DIODES  LEAKAGE CURRENT