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| Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文 materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265 作者: Xue CL 收藏  |  浏览/下载:65/4  |  提交时间:2011/07/05
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| Omnidirectional absorption enhancement in hybrid waveguide-plasmon system 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 26, 页码: 261101 Zhang J; Bai WL; Cai LK; Chen X; Song GF; Gan QQ 收藏  |  浏览/下载:18/0  |  提交时间:2012/02/06
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| Investigation of flexible electrodes modified by TiN, Pt black and IrO (x) 期刊论文 science china-technological sciences, 2011, 卷号: 54, 期号: 9, 页码: 2305-2309 Li XQ; Pei WH; Tang RY; Gui Q; Guo K; Wang Y; Chen HD 收藏  |  浏览/下载:17/0  |  提交时间:2011/09/14
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| A new method to measure the carrier concentration of p-GaN 期刊论文 acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804 Zhou M; Zhao DG 收藏  |  浏览/下载:66/7  |  提交时间:2011/07/05
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| Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804 Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui) 收藏  |  浏览/下载:114/2  |  提交时间:2010/04/22
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| Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文 : journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302 作者: Zhu JJ; Yang H; Yang H; Zhao DG; Zhang SM 收藏  |  浏览/下载:233/10  |  提交时间:2010/04/13
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| Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载:78/2  |  提交时间:2010/05/24
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| The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者: Yang H; Jiang DS; Zhao DG; Zhang SM; Yang H 收藏  |  浏览/下载:92/41  |  提交时间:2010/03/08
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| Surface characteristics of SiO2-TiO2 strip fabricated by laser direct writing 期刊论文 chinese optics letters, 2008, 卷号: 6, 期号: 2, 页码: 108-111 Li AK; Wang ZM; Liu JJ; Zeng XY; Wang CX; Chen HD 收藏  |  浏览/下载:84/2  |  提交时间:2010/03/08
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| Influence of cracks generation on the structural and optical properties of GaN/Al0.55Ga0.45N multiple quantum wells 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 8, 页码: 3043-3050 作者: Zhang SM 收藏  |  浏览/下载:84/0  |  提交时间:2010/04/11
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