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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Frequency drift and instantaneous linewidth broadening of phase-section tuned SG-DBR laser 期刊论文 optics communications, 2011, 卷号: 284, 期号: 5, 页码: 1312-1317 作者:  Wang LX;  Ke JH 收藏  |  浏览/下载：61/2  |  提交时间：2011/07/05 Frequency drift  Instantaneous linewidth  Sampled-grating distributed Bragg reflector laser  SEMICONDUCTOR-LASERS  WAVELENGTH  PHOTODETECTORS  PERFORMANCE  DIODES   Small-Signal Equivalent-Circuit Model and Characterization of 1.55-mu m Buried Tunnel Junction Vertical-Cavity Surface-Emitting Lasers 期刊论文 ieee transactions on microwave theory and techniques, 2010, 卷号: 58, 期号: 5, 页码: 1283-1289 Zhu NH (Zhu Ning Hua); Xu GZ (Xu Gui Zhi); Hofmann W (Hofmann Werner); Chen W (Chen Wei); Bohm G (Boehm Gerhard); Liu; Y (Liu Yu); Wang X (Wang Xin); Xie L (Xie Liang); Amann MC (Amann Markus-Christian) 收藏  |  浏览/下载：120/1  |  提交时间：2010/06/04 Equivalent-circuit model  optical modulation  scattering parameters  semiconductor lasers  vertical-cavity surface-emitting lasers (VCSELs)   An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文 journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464 作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS 收藏  |  浏览/下载：151/11  |  提交时间：2010/04/04 Nitride materials  Crystal growth  X-ray diffraction  TIME-RESOLVED PHOTOLUMINESCENCE  LIGHT-EMITTING-DIODES  PIEZOELECTRIC FIELDS  LASER-DIODES  DEPENDENCE  RECOMBINATION  POLARIZATION  DYNAMICS  GROWTH  MOCVD   Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文 journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144 Lin, T; Zheng, K; Wang, CL; Ma, XY 收藏  |  浏览/下载：38/3  |  提交时间：2010/03/08 diffusion  metalorganic vapor phase epitaxy  semiconducting III-V materials  laser diodes   Narrow stripe selective growth of oxide-free InGaAlAs/InGaAlAs MQWs by ultra-low pressure MOVPE 期刊论文 semiconductor science and technology, 2006, 卷号: 21, 期号: 7, 页码: 841-845 Feng W (Feng W.); Pan JQ (Pan J. Q.); Zhou F (Zhou F.); Yang H (Yang H.); Zhao LJ (Zhao L. J.); Zhu HL (Zhu H. L.); Wang W (Wang W.) 收藏  |  浏览/下载：18/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  QUANTUM-WELL STRUCTURES  BANDGAP ENERGY CONTROL  LAYERS  INGAASP   Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文 chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586 Cao YL (Cao Yu-Lian); Lian P (Lian Peng); Ma WQ (Ma Wen-Quan); Wang Q (Wang Qing); Wu XM (Wu Xu-Ming); He GR (He Guo-Rong); Li H (Li Hui); Wang XD (Wang Xiao-Dong); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui) 收藏  |  浏览/下载：70/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  DIODE-LASERS  INTERFACE CHARACTERISTICS  GROWTH SEQUENCE  MOVPE GROWTH  LP-MOVPE  HETEROSTRUCTURES  HETEROJUNCTION  POWER  NM   Optical characteristics of DBR with inhomogeneous graded interfaces 期刊论文 acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 4983-4986 Wang XD (Wang Xiao-Dong); Wu XM (Wu Xu-Ming); Wang Q (Wang Qing); Cao YL (Cao Yu-Lian); He GR (He Guo-Rong); Tan MQ (Tan Man-Qing) 收藏  |  浏览/下载：32/0  |  提交时间：2010/04/11 DBR  reflectance spectrum  reflective phase shift  characteristic matrix method  SURFACE-EMITTING-LASERS  DISTRIBUTED BRAGG REFLECTORS  THRESHOLD   AlGaInAs narrow stripe selective growth on substrates patterned with different mask designs 期刊论文 journal of physics d-applied physics, 2006, 卷号: 39, 期号: 11, 页码: 2330-2334 作者:  Pan JQ 收藏  |  浏览/下载：42/0  |  提交时间：2010/04/11 VAPOR-PHASE EPITAXY  BURIED-HETEROSTRUCTURE LASERS  BANDGAP ENERGY CONTROL  QUANTUM-WELL LASERS  PRESSURE MOVPE  AREA GROWTH  INGAALAS  LAYERS   Investigations on oxide-free InGaAlAs waveguides grown by narrow stripe selective MOVPE 会议论文 12th international conference on indium phosphide and related materials, princeton, nj, may 07-11, 2006 Feng, W (Feng, W.); Pan, JQ (Pan, J. Q.); Zhou, F (Zhou, F.); Zhao, LJ (Zhao, L. J.); Zhu, HL (Zhu, H. L.); Wang, W (Wang, W.) 收藏  |  浏览/下载：96/15  |  提交时间：2010/03/29 BURIED-HETEROSTRUCTURE LASERS  BANDGAP ENERGY CONTROL  VAPOR-PHASE EPITAXY  PRESSURE MOVPE  CONVERTER   Photoluminescence properties of nitrogen-doped ZnSe epilayers 期刊论文 journal of infrared and millimeter waves, 1999, 卷号: 18, 期号: 1, 页码: 13-18 Zhu ZM; Liu NZ; Li GH; Han HX; Wang ZP; Wang SZ; He L; Ji RB; Wu Y 收藏  |  浏览/下载：40/0  |  提交时间：2010/08/12 ZnSe : N  photoluminescence  hound exciton  P-TYPE ZNSE  TEMPERATURE-DEPENDENCE  LASER-DIODES  LUMINESCENCE  ACCEPTORS  MOLECULAR-BEAM EPITAXY