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Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：144/3  |  提交时间：2010/04/05
Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 12, 页码: art.no.125007
Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.)
收藏  |  浏览/下载：245/114  |  提交时间：2010/03/08
DCXRD Investigation of a Ge/Si（001） Island Multilayer Structure 期刊论文
半导体学报, 2007, 卷号: 28, 期号: 2, 页码: 145-148
作者:  Xue Chunlai
收藏  |  浏览/下载：22/0  |  提交时间：2010/11/23
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29
Chemical composition and elastic strain in AlInGaN quaternary films 期刊论文
thin solid films, 2006, 卷号: 515, 期号: 4, 页码: 1429-1432
Zhou, SQ (Zhou, Shengqiang); Wu, MF (Wu, M. F.); Yao, SD (Yao, S. D.); Liu, JP (Liu, J. P.); Yang, H (Yang, H.)
收藏  |  浏览/下载：36/0  |  提交时间：2010/03/29
Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917
作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG
收藏  |  浏览/下载：50/0  |  提交时间：2010/04/11
Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 2, 页码: 414-417
作者:  Chen Lianghui;  Zhang Shuming;  Zhu Jianjun;  Zhao Degang
收藏  |  浏览/下载：170/1  |  提交时间：2010/11/23
High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature 期刊论文
applied physics letters, 2004, 卷号: 84, 期号: 25, 页码: 5100-5102
作者:  Xu YQ
收藏  |  浏览/下载：223/54  |  提交时间：2010/03/09
PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER 期刊论文
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 7b, 页码: l900-l902
HAO MS; LIANG JW; ZHENG LX; DENG LS; XIAO ZB; HU XW
收藏  |  浏览/下载：19/0  |  提交时间：2010/11/17

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