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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文 semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001 作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H 收藏  |  浏览/下载：92/41  |  提交时间：2010/03/08 MOLECULAR-BEAM EPITAXY  ELECTRON-TRANSPORT  BAND-GAP  FILMS  SAPPHIRE   Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文 applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503 Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.) 收藏  |  浏览/下载：27/0  |  提交时间：2010/04/11 MOLECULAR-BEAM EPITAXY  N-TYPE GAN  ELECTRICAL-PROPERTIES  BIAS LEAKAGE  DIODES  OXYGEN   Evolution of mosaic structure in InN grown by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 269-272 Huang Y (Huang Y.); Wang H (Wang H.); Sun Q (Sun Q.); Chen J (Chen J.); Li DY (Li D. Y.); Zhang JC (Zhang J. C.); Wang JF (Wang J. F.); Wang YT (Wang Y. T.); Yang H (Yang H.) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 growth mode  X-ray diffraction  metalorganic chemical vapor deposition  indium nitride  X-RAY-DIFFRACTION  THREADING DISLOCATIONS  ELECTRON-TRANSPORT  BUFFER LAYER  THIN-FILMS  GAN FILMS  SAPPHIRE  ALN   Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW 收藏  |  浏览/下载：17/2  |  提交时间：2010/10/29 BUFFER LAYER  SUBSTRATE  DIODES  GROWTH   Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation 期刊论文 ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5 Jie WZ; Jin CS; Fan Z; Jie WX; Wei W; Han WR 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 CVD  insulation  leakage currents  oxidation  quantum-well lasers  semiconductor heterojunctions  thermal factors  DIODES  LEAKAGE CURRENT