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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation on a pressure-gradient fiber laser hydrophone 期刊论文 measurement science & technology, 2010, 卷号: 21, 期号: 9,sp. iss., 页码: art. no. 094037 Zhang WT (Zhang Wentao); Zhang FX (Zhang Faxiang); Li F (Li Fang); Liu YL (Liu Yuliang) 收藏  |  浏览/下载：314/55  |  提交时间：2010/09/07 fiber laser  hydrophone  pressure compensation  pressure-gradient   Overall optimization of high-speed semiconductor laser modules 期刊论文 chinese science bulletin, 2009, 卷号: 54, 期号: 20, 页码: 3697-3703 Liu Y (Liu Yu); Chen SF (Chen ShuoFu); Wang X (Wang Xin); Yuan HQ (Yuan HaiQing); Liang X (Liang, Xie); Zhu NH (Zhu NingHua) 收藏  |  浏览/下载：193/21  |  提交时间：2010/03/08 optimization design   FBG pressure sensor based on the double shell cylinder with temperature compensation 期刊论文 measurement, 2009, 卷号: 42, 期号: 3, 页码: 408-411 作者:  Zhang WT 收藏  |  浏览/下载：185/64  |  提交时间：2010/03/08 Fiber Bragg grating  Temperature compensation  Pressure sensor   Bonding-wire compensation effect on the packaging parasitics of optoelectronic devices 期刊论文 microwave and optical technology letters, 2006, 卷号: 48, 期号: 1, 页码: 76-79 Zhu NH; Liu Y; Zhang SJ; Wen JM 收藏  |  浏览/下载：46/0  |  提交时间：2010/04/11 packaging  photodiode  semiconductor laser  S-parameter measurement  DESIGN   Small-signal and large-signal performance test of high-speed optoelectronics devices 会议论文 conference on semiconductor and organic optoelectronic materials and devices, beijing, peoples r china, nov 09-11, 2004 Zhu NH; Chen C; Sun JW; Pun EYB; Chung PS 收藏  |  浏览/下载：122/40  |  提交时间：2010/03/29 scattering parameters   PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER 期刊论文 japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 7b, 页码: l900-l902 HAO MS; LIANG JW; ZHENG LX; DENG LS; XIAO ZB; HU XW 收藏  |  浏览/下载：19/0  |  提交时间：2010/11/17 GAAS/SI  PHOTOLUMINESCENCE  AMORPHOUS SI  SIMS  HALL MEASUREMENT  DOUBLE CRYSTAL X-RAY  CHEMICAL VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  ON-SI  MOCVD  TEMPERATURE  MECHANISM