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CORC

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Flattening of low temperature epitaxial Ge1-xSnx/Ge/Si(100) alloys via mass transport during post-growth annealing 期刊论文
applied surface science, 2011, 卷号: 257, 期号: 9, 页码: 4468-4471
Wang W; Su SJ; Zheng J; Zhang GZ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载：101/7  |  提交时间：2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载：66/4  |  提交时间：2011/07/05
Structural and electronic properties of Si nanocrystals embedded in amorphous SiC matrix 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 9, 页码: 3963-3966
Song C; Rui YJ; Wang QB; Xu J; Li W; Chen KJ; Zuo YH; Wang QM
收藏  |  浏览/下载：55/6  |  提交时间：2011/07/05
Role of Bi3+ ions for Er3+ ions efficient 1.54 mu m light emission in Er/Bi codoped SiO2 thin film prepared by sol-gel method 期刊论文
journal of luminescence, 2010, 卷号: 130, 期号: 10, 页码: 1760-1763
Zheng J (Zheng J.); Zuo YH (Zuo Y. H.); Zhang LZ (Zhang L. Z.); Wang W (Wang W.); Xue CL (Xue C. L.); Cheng BW (Cheng B. W.); Yu JZ (Yu J. Z.); Guo HQ (Guo H. Q.); Wang QM (Wang Q. M.)
收藏  |  浏览/下载：108/4  |  提交时间：2010/09/07
PHASE TRANSITION OF VANADIUM OXIDE FILMS ANNEALED WITH DIFFERENT METHODS 期刊论文
journal of infrared and millimeter waves, 2010, 卷号: 29, 期号: 6, 页码: 457-460
作者:  Li GK
收藏  |  浏览/下载：50/3  |  提交时间：2011/07/05
Effect of annealing on photoluminescence properties of neon implanted GaN 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 2, 页码: art. no. 025107
作者:  Yang H;  Lu GJ;  Zhang SM;  Zhao DG;  Yang H
收藏  |  浏览/下载：66/1  |  提交时间：2010/03/08
Improved surface morphology of stacked 1.3 mu m InAs/GaAs quantum dot active regions by introducing annealing processes 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 8, 页码: art.no.081902
Yang T (Yang Tao); Tatebayashi J (Tatebayashi Jun); Nishioka M (Nishioka Masao); Arakawa Y (Arakawa Yasuhiko)
收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11
Surface morphology of AlN buffer layer and its effect on GaN growth by metalorganic chemical vapor deposition 期刊论文
applied physics letters, 2004, 卷号: 85, 期号: 9, 页码: 1499-1501
Zhao, DG; Zhu, JJ; Liu, ZS; Zhang, SM; Yang, H; Jiang, DS
收藏  |  浏览/下载：260/63  |  提交时间：2010/03/09
Effect of SiO2 encapsulation on the nitrogen reorganization in a GaNAs/GaAs single quantum well 期刊论文
chinese physics letters, 2004, 卷号: 21, 期号: 3, 页码: 521-523
作者:  Xu YQ
收藏  |  浏览/下载：65/21  |  提交时间：2010/03/09
In situ annealing during the growth of relaxed SiGe 会议论文
conference on optical and infrared thin films, san diego, ca, 36739
Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM
收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29

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