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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载：48/3  |  提交时间：2011/07/05
Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载：64/4  |  提交时间：2011/07/05
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：233/10  |  提交时间：2010/04/13
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：76/2  |  提交时间：2010/05/24
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载：149/11  |  提交时间：2010/04/04
Determination of the tilt and twist angles of curved GaN layers by high-resolution x-ray diffraction 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 12, 页码: art.no.125007
Liu, JQ (Liu, J. Q.); Wang, JF (Wang, J. F.); Qiu, YX (Qiu, Y. X.); Guo, X (Guo, X.); Huang, K (Huang, K.); Zhang, YM (Zhang, Y. M.); Hu, XJ (Hu, X. J.); Xu, Y (Xu, Y.); Xu, K (Xu, K.); Huang, XH (Huang, X. H.); Yang, H (Yang, H.)
收藏  |  浏览/下载：245/114  |  提交时间：2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08
Strain-induced anodization of SiGe/Si multiple layers to form high density SiGe/Si heterogeneous nanorods 期刊论文
solid state communications, 2009, 卷号: 149, 期号: 43-44, 页码: 1897-1901
Zhou B; Pan SW; Chen R; Chen SY; Li C; Lai HK; Yu; JZ; Zhu XF
收藏  |  浏览/下载：49/0  |  提交时间：2010/04/04
Study on Raman spectra of GaMnAs 期刊论文
journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212
Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH
收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11

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