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科研机构
半导体研究所 [21]
内容类型
期刊论文 [19]
会议论文 [2]
发表日期
2011 [3]
2010 [3]
2009 [3]
2008 [1]
2007 [2]
2006 [4]
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学科主题
光电子学 [21]
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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ
;
Wang W
;
Cheng BW
;
Zhang GZ
;
Hu WX
;
Xue CL
;
Zuo YH
;
Wang QM
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  |  
浏览/下载:77/4
  |  
提交时间:2011/07/05
Thermal stability
Molecular beam epitaxy
Germanium tin alloys
Germanium
MOLECULAR-BEAM EPITAXY
LOW-TEMPERATURE
SEMICONDUCTORS
GE(001)2X1
Dislocation cross-slip in GaN single crystals under nanoindentation
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 22, 页码: art. no. 221906
Huang J
;
Xu K
;
Gong XJ
;
Wang JF
;
Fan YM
;
Liu JQ
;
Zeng XH
;
Ren GQ
;
Zhou TF
;
Yang H
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  |  
浏览/下载:55/1
  |  
提交时间:2011/07/06
BERKOVICH NANOINDENTATION
THIN-FILMS
INDENTATION
MECHANISMS
EPILAYERS
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ
;
Wang W
;
Zhang GZ
;
Hu WX
;
Bai AQ
;
Xue CL
;
Zuo YH
;
Cheng BW
;
Wang QM
收藏
  |  
浏览/下载:59/3
  |  
提交时间:2011/07/05
GeSn
Ge
molecular beam epitaxy
epitaxial growth
SEMICONDUCTORS
GE(001)2X1
Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation
期刊论文
ieee photonics journal, 2010, 卷号: 2, 期号: 6, 页码: 974-980
Zhao JH (Zhao Ji-Hong)
;
Cheng BW (Cheng Bu-Wen)
;
Chen QD (Chen Qi-Dai)
;
Su W (Su Wen)
;
Jiang Y (Jiang Ying)
;
Chen ZG (Chen Zhan-Guo)
;
Jia G (Jia Gang)
;
Sun HB (Sun Hong-Bo)
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  |  
浏览/下载:87/0
  |  
提交时间:2010/12/12
CUBIC CENTROSYMMETRIC CRYSTALS
3RD-HARMONIC GENERATION
PHENOMENOLOGICAL THEORY
LAYERS
SUPERLATTICES
HETEROSTRUCTURES
SUSCEPTIBILITY
SPECTROSCOPY
DEFORMATION
REFLECTION
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang)
;
Zhang S (Zhang Shuang)
;
Liu WB (Liu Wen-Bao)
;
Hao XP (Hao Xiao-Peng)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Yang H (Yang Hui)
;
Wei L (Wei Long)
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  |  
浏览/下载:78/2
  |  
提交时间:2010/05/24
Ga vacancies
MOCVD
GaN
Schottky barrier photodetector
REVERSE-BIAS LEAKAGE
MOLECULAR-BEAM EPITAXY
P-N-JUNCTIONS
POSITRON-ANNIHILATION
DIODES
FILMS
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi)
;
Wang YT (Wang Yu-Tian)
;
Zhao DG (Zhao De-Gang)
;
Jiang DS (Jiang De-Sheng)
;
Zhu JJ (Zhu Jian-Jun)
;
Liu ZS (Liu Zong-Shun)
;
Wang H (Wang Hui)
;
Zhang SM (Zhang Shu-Ming)
;
Qiu YX (Qiu Yong-Xin)
;
Xu K (Xu Ke)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:69/0
  |  
提交时间:2010/08/17
in-plane grazing incidence x-ray diffraction
gallium nitride
mosaic structure
biaxial strain
CHEMICAL-VAPOR-DEPOSITION
LATTICE-CONSTANTS
ALN
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation
期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 7, 页码: 753-757
作者:
Duan RF
;
Wei TB
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  |  
浏览/下载:98/0
  |  
提交时间:2010/03/08
GaN
Nonpolar
HVPE
Nanoindentation
Cathodoluminescence
Raman mapping
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition
期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:
Zhang SM
;
Yang H
;
Yang H
;
Wang YT
;
Zhu JJ
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  |  
浏览/下载:73/0
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
PHASE EPITAXY
QUANTUM DOTS
BAND-GAP
GROWTH
SURFACES
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD
期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:
Yang H
;
Jiang DS
;
Zhao DG
;
Zhang SM
;
Yang H
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  |  
浏览/下载:92/41
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
ELECTRON-TRANSPORT
BAND-GAP
FILMS
SAPPHIRE
Investigation on the structural origin of n-type conductivity in InN films
期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H
;
Jiang, DS
;
Wang, LL
;
Sun, X
;
Liu, WB
;
Zhao, DG
;
Zhu, JJ
;
Liu, ZS
;
Wang, YT
;
Zhang, SM
;
Yang, H
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  |  
浏览/下载:53/1
  |  
提交时间:2010/03/08
MOLECULAR-BEAM EPITAXY
GAN FILMS
DISLOCATION SCATTERING
LAYER THICKNESS
INDIUM NITRIDE
BAND-GAP
VACANCIES
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