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Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates 期刊论文
journal of crystal growth, 2011, 卷号: 317, 期号: 1, 页码: 43-46
Su SJ; Wang W; Cheng BW; Zhang GZ; Hu WX; Xue CL; Zuo YH; Wang QM
收藏  |  浏览/下载:77/4  |  提交时间:2011/07/05
Dislocation cross-slip in GaN single crystals under nanoindentation 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 22, 页码: art. no. 221906
Huang J; Xu K; Gong XJ; Wang JF; Fan YM; Liu JQ; Zeng XH; Ren GQ; Zhou TF; Yang H
收藏  |  浏览/下载:55/1  |  提交时间:2011/07/06
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 2, 页码: article no.28101
Su SJ; Wang W; Zhang GZ; Hu WX; Bai AQ; Xue CL; Zuo YH; Cheng BW; Wang QM
收藏  |  浏览/下载:59/3  |  提交时间:2011/07/05
Near-Infrared Femtosecond Laser for Studying the Strain in Si1-xGex Alloy Films via Second-Harmonic Generation 期刊论文
ieee photonics journal, 2010, 卷号: 2, 期号: 6, 页码: 974-980
Zhao JH (Zhao Ji-Hong); Cheng BW (Cheng Bu-Wen); Chen QD (Chen Qi-Dai); Su W (Su Wen); Jiang Y (Jiang Ying); Chen ZG (Chen Zhan-Guo); Jia G (Jia Gang); Sun HB (Sun Hong-Bo)
收藏  |  浏览/下载:87/0  |  提交时间:2010/12/12
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载:78/2  |  提交时间:2010/05/24
Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 7, 页码: art. no. 076804
Guo X (Guo Xi); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Qiu YX (Qiu Yong-Xin); Xu K (Xu Ke); Yang H (Yang Hui)
收藏  |  浏览/下载:69/0  |  提交时间:2010/08/17
Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation 期刊论文
nanoscale research letters, 2009, 卷号: 4, 期号: 7, 页码: 753-757
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载:98/0  |  提交时间:2010/03/08
Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 14, 页码: art. no. 145410
作者:  Zhang SM;  Yang H;  Yang H;  Wang YT;  Zhu JJ
收藏  |  浏览/下载:73/0  |  提交时间:2010/03/08
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载:92/41  |  提交时间:2010/03/08
Investigation on the structural origin of n-type conductivity in InN films 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 13, 页码: art. no. 135403
Wang, H; Jiang, DS; Wang, LL; Sun, X; Liu, WB; Zhao, DG; Zhu, JJ; Liu, ZS; Wang, YT; Zhang, SM; Yang, H
收藏  |  浏览/下载:53/1  |  提交时间:2010/03/08


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