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Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition 期刊论文
journal of alloys and compounds, 2011, 卷号: 509, 期号: 3, 页码: 748-750
作者:  Yang H;  Jiang DS;  Le LC;  Zhang SM;  Wu LL
收藏  |  浏览/下载:48/3  |  提交时间:2011/07/05
Analysis of Modified Williamson-Hall Plots on GaN Layers 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.16101
Liu JQ; Qiu YX; Wang JF; Xu K; Yang H
收藏  |  浏览/下载:38/3  |  提交时间:2011/07/05
Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 2, 页码: art. no. 026804
Lu GJ (Lu Guo-Jun); Zhu JJ (Zhu Jian-Jun); Jiang DS (Jiang De-Sheng); Wang YT (Wang Yu-Tian); Zhao DG (Zhao De-Gang); Liu ZS (Liu Zong-Shun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:112/2  |  提交时间:2010/04/22
Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer 期刊论文
thin solid films, 2010, 卷号: 518, 期号: 17, 页码: 5028-5031
Wang H (Wang H.); Jiang DS (Jiang D. S.); Jahn U (Jahn U.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Yang H (Yang H.)
收藏  |  浏览/下载:60/2  |  提交时间:2010/08/17
An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells 期刊论文
journal of alloys and compounds, 2010, 卷号: 489, 期号: 2, 页码: 461-464
作者:  Wang YT;  Zhao DG;  Zhang SM;  Yang H;  Jiang DS
收藏  |  浏览/下载:149/11  |  提交时间:2010/04/04
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, XC; Zhao, YW; Dong, ZY; Li, JM
收藏  |  浏览/下载:40/0  |  提交时间:2010/03/09
Does an enhanced yellow luminescence imply a reduction of electron mobility in n-type GaN? 期刊论文
journal of applied physics, 2007, 卷号: 102, 期号: 11, 页码: art. no. 113521
Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Liang, JW; Yang, H
收藏  |  浏览/下载:51/5  |  提交时间:2010/03/08
Depth dependence of structural quality in InN grown by metalorganic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 2, 页码: 516-519
作者:  Wang H;  Wang YT;  Wang LL;  Yang H;  Wang H
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29
Investigation of Ge-Si atomic interdiffusion in Ge nano-dots multilayer structure by double crystal X-ray diffraction 期刊论文
journal of materials science & technology, 2007, 卷号: 23, 期号: 3, 页码: 301-303
Shi WH (Shi Wenhua); Zhao L (Zhao Lei); Luo LP (Luo Liping); Wang QM (Wang Qiming)
收藏  |  浏览/下载:108/0  |  提交时间:2010/03/29
Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233
Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun)
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29


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