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Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer 期刊论文
digest of technical papers - symposium on vlsi technology, 2012, 页码: 97-98
Han, Genquan; Su, Shaojian; Wang, Lanxiang; Zhang, Zheng; Xue, Chunlai; Cheng, Buwen; Yeo, Yee-Chia; Wang, Wei; Gong, Xiao; Yang, Yue; Ivana; Guo, Pengfei; Guo, Cheng; Zhang, Guangze; Pan, Jisheng
收藏  |  浏览/下载:24/0  |  提交时间:2013/05/07
Abnormal photoabsorption in high resistance GaN epilayer 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8048-8051
Liu WB (Liu Wen-Bao); Zhao DG (Zhao De-Gang); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhu JJ (Zhu Jian-Jun); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui)
收藏  |  浏览/下载:30/0  |  提交时间:2010/12/27
The junction temperature and forward voltage relationship of GaN-based laser diode 期刊论文
laser physics, 2009, 卷号: 19, 期号: 3, 页码: 400-402
Liu YT; Cao Q; Song GF; Chen LH
收藏  |  浏览/下载:310/64  |  提交时间:2010/03/08
Fabrication and transport properties of ZnO/Nb-1 wt %-doped SrTiO3 epitaxial heterojunctions 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 1, 页码: art. no. 012115
Wu, YL; Zhang, LW; Xie, GL; Zhu, JL; Chen, YH
收藏  |  浏览/下载:64/3  |  提交时间:2010/03/08
Photoluminescence study of AlGaInP/GaInP quantum well intermixing induced by zinc impurity diffusion 期刊论文
journal of crystal growth, 2007, 卷号: 309, 期号: 2, 页码: 140-144
Lin, T; Zheng, K; Wang, CL; Ma, XY
收藏  |  浏览/下载:38/3  |  提交时间:2010/03/08
Influence of GaAsP insertion layers on performance of InGaAsP/InGaP/AlGaAs quantum-well laser 期刊论文
chinese physics letters, 2006, 卷号: 23, 期号: 9, 页码: 2583-2586
Cao YL (Cao Yu-Lian); Lian P (Lian Peng); Ma WQ (Ma Wen-Quan); Wang Q (Wang Qing); Wu XM (Wu Xu-Ming); He GR (He Guo-Rong); Li H (Li Hui); Wang XD (Wang Xiao-Dong); Song GF (Song Guo-Feng); Chen LH (Chen Liang-Hui)
收藏  |  浏览/下载:70/0  |  提交时间:2010/04/11
High-power AlGaInP laser diodes with current-injection-free region near the laser facet 期刊论文
optical engineering, 2006, 卷号: 45, 期号: 3, 页码: art.no.034205
Xu Y; Li YZ; Gan QQ; Cao Q; Song GF; Guo L; Chen LH
收藏  |  浏览/下载:55/0  |  提交时间:2010/04/11
Design consideration and performance of high-power and high-brightness InGaAs-InGaAsP-AlGaAs quantum-well diode lasers (lambda=0.98 mu m) 期刊论文
ieee journal of selected topics in quantum electronics, 2000, 卷号: 6, 期号: 4, 页码: 577-584
Yang GW; Hwu RJ; Xu ZT; Ma XY
收藏  |  浏览/下载:48/0  |  提交时间:2010/08/12
Photoluminescence properties of nitrogen-doped ZnSe epilayers 期刊论文
journal of infrared and millimeter waves, 1999, 卷号: 18, 期号: 1, 页码: 13-18
Zhu ZM; Liu NZ; Li GH; Han HX; Wang ZP; Wang SZ; He L; Ji RB; Wu Y
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12
Native-oxidized InAlAs blocking layer buried heterostructure InGaAsP-InP MQW laser for high-temperature operation 期刊论文
ieee photonics technology letters, 1999, 卷号: 11, 期号: 1, 页码: 3-5
Jie WZ; Jin CS; Fan Z; Jie WX; Wei W; Han WR
收藏  |  浏览/下载:42/0  |  提交时间:2010/08/12


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