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科研机构
半导体研究所 [42]
内容类型
会议论文 [42]
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2009 [1]
2008 [7]
2007 [3]
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2005 [2]
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光电子学 [42]
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学科主题:光电子学
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Growth behavior of AlInGaN films
会议论文
4th asian conference on crystal growth and crystal technology, sendai, japan, may 21-24, 2008
Shang JZ
;
Zhang BP
;
Mao MH
;
Cai LE
;
Zhang JY
;
Fang ZL
;
Liu BL
;
Yu JZ
;
Wang QM
;
Kusakabe K
;
Ohkawa K
收藏
  |  
浏览/下载:31/0
  |  
提交时间:2010/03/09
Scanning electron microscope
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:136/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Liu, NX
;
Yan, JC
;
Liu, Z
;
Ma, P
;
Wang, JX
;
Li, JM
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
AlGaN
HT-AlGaN buffer
HT-interlayers
ultraviolet (UV) LED
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer
会议论文
5th ieee international conference on group iv photonics, sorrento, italy, sep 17-19, 2008
作者:
Xue CL
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/03/09
SIGE/SI(100) EPITAXIAL-FILMS
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC
;
Wang, JX
;
Liu, NX
;
Liu, Z
;
Li, JM
收藏
  |  
浏览/下载:41/0
  |  
提交时间:2010/03/09
AlGaN
GaN template
A1N interlayer
MOCVD
crack
interference fringes
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y
;
Yi, XY
;
Wang, XD
;
Guo, JX
;
Wang, LC
;
Wang, GH
;
Yang, FH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:51/0
  |  
提交时间:2010/03/09
GaN
LED
plasma
damage
etch
ICP
PECVD
The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Wei, TB
;
Duan, RF
;
Wang, JX
;
Li, JM
;
Huo, ZQ
;
Zeng, YP
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
HVPE
GaN
nitridation
polarity
etching
Design and performance of monolithic integrated electro-absorption modulated distributed feedback laser - art. no. 67820Y
会议论文
conference on optoelectronic materials and devices ii, wuhan, peoples r china, nov 02-05, 2007
作者:
Pan JQ
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
butt joint
High speed silicon optical switches based on carrier depletion - art. no. 67812D
会议论文
conference on passive components and fiber-based devices iv, wuhan, peoples r china, nov 02-05, 2007
作者:
Li ZY
收藏
  |  
浏览/下载:66/0
  |  
提交时间:2010/03/09
optical switches
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