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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Mitigating self-discharge of carbon-based electrochemical capacitors by modifying their electric-double layer to maximize energy efficiency 期刊论文 JOURNAL OF ENERGY CHEMISTRY, 2019, 卷号: 38, 页码: 214-218 作者:  Wang, Yu-Zuo;  Shan, Xu-Yi;  Wang, Da-Wei;  Cheng, Hui-Ming;  Li, Feng 收藏  |  浏览/下载：25/0  |  提交时间：2021/02/02 Electric double layer  Self-discharge  Graphene  Lithium ion capacitor   Mitigating self-discharge of carbon-based electrochemical capacitors by modifying their electric-double layer to maximize energy efficiency 期刊论文 JOURNAL OF ENERGY CHEMISTRY, 2019, 卷号: 38, 页码: 214-218 作者:  Wang, Yu-Zuo;  Shan, Xu-Yi;  Wang, Da-Wei;  Cheng, Hui-Ming;  Li, Feng 收藏  |  浏览/下载：32/0  |  提交时间：2021/02/02 Electric double layer  Self-discharge  Graphene  Lithium ion capacitor   Mitigating self-discharge of carbon-based electrochemical capacitors by modifying their electric-double layer to maximize energy efficiency 期刊论文 JOURNAL OF ENERGY CHEMISTRY, 2019, 卷号: 38, 页码: 214-218 作者:  Wang, Yu-Zuo;  Shan, Xu-Yi;  Wang, Da-Wei;  Cheng, Hui-Ming;  Li, Feng 收藏  |  浏览/下载：28/0  |  提交时间：2021/02/02 Electric double layer  Self-discharge  Graphene  Lithium ion capacitor   Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文 IEEE Transactions on Circuits and Systems I: Regular Papers, 2019, 卷号: Vol.66 No.1, 页码: 226-238 作者:  Xiaoqing Zhao;  Liangliang Dai;  Nanning Zheng;  Xiulong Wu;  Yang Yang 收藏  |  浏览/下载：20/0  |  提交时间：2019/04/24 Reliability  Nonvolatile  memory  Prototypes  Bit  error  rate  Computer  architecture  Transistors  Sun  ReRAM  solid  state  drive  reliability  endurance  bit  error  rate   Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: Vol.66 No.1, 页码: 226-238 作者:  Zheng, Nanning;  Liu, Longjun;  Yang, Yang;  Wu, Xiulong;  Zhao, Xiaoqing 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/24 ReRAM  solid  state  drive  reliability  endurance  bit  error  rate   Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文 IEEE Transactions on Circuits and Systems I: Regular Papers, 2019, 卷号: Vol.66 No.1, 页码: 226-238 作者:  Xiaoqing Zhao;  Hongbin Sun;  Longjun Liu;  Yang Yang;  Liangliang Dai 收藏  |  浏览/下载：2/0  |  提交时间：2019/12/13 Reliability  Nonvolatile  memory  Prototypes  Bit  error  rate  Computer  architecture  Transistors  Sun  ReRAM  solid  state  drive  reliability  endurance  bit  error  rate   Architectural Exploration to Address the Reliability Challenges for ReRAM-Based Buffer in SSD 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: Vol.66 No.1, 页码: 226-238 作者:  Zhao, Xiaoqing;  Sun, Hongbin;  Liu, Longjun;  Yang, Yang;  Dai, Liangliang 收藏  |  浏览/下载：12/0  |  提交时间：2019/12/17 ReRAM  solid  state  drive  reliability  endurance  bit  error  rate   Review of SiC MOSFET Drive Circuit 会议论文 2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2019-01-01 作者:  Liu, Yang;  Yang, Yuan 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/20 Silicon Carbide (SiC) devices  Switching characteristics  drive circuit