×
验证码:
换一张
忘记密码?
记住我
CORC
首页
科研机构
检索
知识图谱
申请加入
托管服务
登录
注册
在结果中检索
科研机构
高能物理研究所 [2]
湖南大学 [2]
北京航空航天大学 [1]
光电技术研究所 [1]
内容类型
期刊论文 [6]
发表日期
2019 [6]
×
知识图谱
CORC
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共6条,第1-6条
帮助
限定条件
发表日期:2019
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
作者升序
作者降序
题名升序
题名降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
Development of a new high-speed readout system for soi pixel detectors
期刊论文
Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484
作者:
Nishimura, Ryutaro
;
Arai, Yasuo
;
Miyoshi, Toshinobu
;
Hirano, Keiichi
;
Kishimoto, Shunji
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2019/04/22
Soi
Pixel detector
Daq
Fpga
X-ray imaging
Development of a new high-speed readout system for soi pixel detectors
期刊论文
Nuclear instruments & methods in physics research section a-accelerators spectrometers detectors and associated equipment, 2019, 卷号: 924, 页码: 480-484
作者:
Nishimura, Ryutaro
;
Arai, Yasuo
;
Miyoshi, Toshinobu
;
Hirano, Keiichi
;
Kishimoto, Shunji
收藏
  |  
浏览/下载:60/0
  |  
提交时间:2019/04/22
Soi
Pixel detector
Daq
Fpga
X-ray imaging
Directional Coupling and Spin Routing in Catenary-Shaped SOI Waveguide
期刊论文
IEEE Photonics Technology Letters, 2019, 卷号: 31, 期号: 6, 页码: 415-418
作者:
Guo, Yinghui
;
Pu, Mingbo
;
Li, Xiong
;
Ma, Xiaoliang
;
Luo, Xiangang
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2021/05/06
Directional coupling
integrated optical waveguide
metasurfaces
spin-orbit interaction
A Snapback-Free and Low-Loss Shorted-Anode SOI LIGBT With Self-Adaptive Resistance
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.3, 页码: 1390-1395
作者:
Xiaorong Luo
;
Yang Yang
;
Tao Sun
;
Jie Wei
;
Diao Fan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/17
Anodes
Resistance
Current density
Silicon-on-insulator
Insulated gate bipolar transistors
Spontaneous emission
Sun
Low-loss
p-type polysilicon
self-adaptive resistance (SAR)
shorted-anode (SA)
snapback-free
silicon on insulator lateral insulated gate bipolar transistor (SOI LIGBT)
Compact Model for Tunnel Diode Body Contact SOI n-MOSFETs
期刊论文
IEEE Transactions on Electron Devices, 2019, 卷号: Vol.66 No.1, 页码: 249-254
作者:
Yongwei Chang
;
Jiexin Luo
;
Jing Chen
;
Lingda Xu
;
Zhan Chai
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/13
MOSFET
circuits
Integrated
circuit
modeling
Semiconductor
device
modeling
Radio
frequency
MOSFET
Analytical
models
Mathematical
model
Body
contact
compact
model
floating
body
effects
(FBEs)
impact
ionization
partially
depleted
silicon-on-insulator
(PD-SOI)
radio
frequency
(RF)
tunnel
diode
body
contact
(TDBC)
Numerical and Experimental Investigation of TID Radiation Effects on the Breakdown Voltage of 400-V SOI NLDMOSFETs
期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2019, 卷号: 66, 页码: 710-715
作者:
Shu, Lei
;
Wang, Liang
;
Zhou, Xin
;
Li, Tong-De
;
Yuan, Zhang-Yi'an
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
400-V silicon-on-insulator (SOI) n-channel laterally diffused metal-oxide-semiconductor field-effect transistor (NLDMOSFET)
BVDS variations
laterally diffused metal-oxide-semiconductor (LDMOS)
radiation effects
SOI
technology computer-aided design (TCAD) simulations
total ionizing dose (TID)
©版权所有 ©2017 CSpace - Powered by
CSpace