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北京航空航天大学 [6]
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期刊论文 [6]
会议论文 [5]
发表日期
2019 [11]
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Heavy ion irradiation induced hard error in MTJ of the MRAM memory array
期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 100, 页码: 7
作者:
Zhao, P. X.
;
Liu, T. Q.
;
Cai, C.
;
Li, D. Q.
;
Ji, Q. G.
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浏览/下载:7/0
  |  
提交时间:2022/01/19
MTJ damage
Heavy ion
Displacement damage
Hard bit error
Annealing effect
Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 卷号: Vol.7 No.14, 页码: 4079-4088
作者:
Han, X.a
;
Mi, W.a
;
Wang, X.b
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  |  
浏览/下载:3/0
  |  
提交时间:2019/11/21
Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits
期刊论文
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172
作者:
Chen, Xiaoming
;
Niemier, Michael
;
Hu, Xiaobo Sharon
;
Yin, Xunzhao
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浏览/下载:73/0
  |  
提交时间:2019/04/03
Ferroelectric FET (FeFET)
logic-in-memory (LiM)
nonvolatile (NV) memory
Memristive Synapses for Brain-Inspired Computing
期刊论文
ADVANCED MATERIALS TECHNOLOGIES, 2019, 卷号: 4, 期号: 3
作者:
Wang, Jingrui
;
Zhuge, Fei
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浏览/下载:43/0
  |  
提交时间:2019/12/18
RESISTIVE-SWITCHING MEMORY
MAGNETIC TUNNEL-JUNCTIONS
LONG-TERM POTENTIATION
PHASE-CHANGE MEMORY
RRAM DEVICES
SYNAPTIC PLASTICITY
CONDUCTANCE LINEARITY
ELECTRONIC SYNAPSES
IMPLEMENTATION
SYSTEM
Low-Temperature Performance of Nanoscale Perpendicular Magnetic Tunnel Junctions With Double MgO-Interface Free Layer
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2019, 卷号: 55
作者:
Cao, Kaihua
;
Li, Huisong
;
Cai, Wenlong
;
Wei, Jiaqi
;
Wang, Lezhi
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浏览/下载:31/0
  |  
提交时间:2019/12/30
Perpendicular magnetic tunnel junction (p-MTJ)
spin transfer torque (STT)
spintronics
temperature dependence
Stability and Variability Emphasized STT-MRAM Sensing Circuit with Performance Enhancement
会议论文
2018 IEEE Asia Pacific Conference on Circuits and Systems, APCCAS 2018, 2018-10-26
作者:
Han, M.
;
Cai, H.
;
Yang, J.
;
Naviner, L.
;
Wang, Y.
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  |  
浏览/下载:11/0
  |  
提交时间:2019/12/30
Convergence of numerical methods
Magnetic anisotropy
Magnetic recording
Magnetic storage
Magnetism
Random access storage
Timing circuits
Tunnel junctions
low Vdd performance
Magnetic random access memory
Magnetic tunnel junction
Performance enhancements
Perpendicular magnetic anisotropy
Process Variation
Sensing margin
STT-MRAM
MRAM devices
Advanced nanoscale magnetic tunnel junctions for low power computing (Invited)
会议论文
2018 IEEE 13th Nanotechnology Materials and Devices Conference, NMDC 2018
作者:
Wang, Z.
;
Peng, S.
;
Wang, M.
;
Zhang, X.
;
Cai, W.
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浏览/下载:6/0
  |  
提交时间:2019/12/30
Magnetic anisotropy
Magnetic storage
Nanomagnetics
Torque
Magnetic tunnel junction
Perpendicular magnetic anisotropy
Skyrmions
Spin orbits
Spin transfer torque
Tunnel junctions
A spin orbit torque based true random number generator with real-time optimization
会议论文
Proceedings of the IEEE Conference on Nanotechnology, 2018-07-23
作者:
Liu, Y.
;
Wang, Z.
;
Li, Z.
;
Wang, X.
;
Zhao, W.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/30
Cryptography
Magnetic devices
Nanotechnology
Number theory
Sampling
Stochastic systems
Tunnel junctions
Magnetic tunnel junction
National Institute of Standards and Technology
Optimization module
Real-time optimization
Spin transfer torque
Statistical sampling
Stochastic switching
Transient simulation
Random number generation
Multi-bit nonvolatile flip-flop based on NAND-like spin transfer torque MRAM
会议论文
IEEE/IFIP International Conference on VLSI and System-on-Chip, VLSI-SoC, 2018-10-08
作者:
Deng, E.
;
Wang, Z.
;
Kang, W.
;
Wei, S.
;
Zhao, W.
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  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
CMOS integrated circuits
Magnetic devices
Magnetic recording
NAND circuits
Standby power systems
Torque
Tunnel junctions
VLSI circuits
Computing system
Magnetic tunnel junction
Non-volatile flip-flops
Spin orbits
Spin transfer torque
Spintronics device
Switching delay
Switching power
Flip flop circuits
Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory
会议论文
Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, 2018-11-21
作者:
Zhang, Yue
;
Wang, Guanda
;
Huang, Zhe
;
Zhang, Zhizhong
;
Wang, Jinkai
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2019/12/30
CMOS integrated circuits
Data storage equipment
Magnetic devices
Metals
MOS devices
Oxide semiconductors
Semiconductor junctions
Spintronics
Tunnel junctions
Complementary metal oxide semiconductors
Logic applications
Logic in memory
Magnetic tunnel junction
Non-volatile memory
Spintronic device
Systematic study
Ultrahigh density
Computer circuits
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