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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing
收藏  |  浏览/下载：37/0  |  提交时间：2022/01/19
Nucleation and growth of helium bubble at (110) twist grain boundaries in tungsten studied by molecular dynamics 期刊论文
CHINESE PHYSICS B, 2019, 卷号: 28, 期号: 8, 页码: 9
作者:  Li, Fang-Biao;  Ran, Guang;  Gao, Ning;  Zhao, Shang-Quan;  Li, Ning
收藏  |  浏览/下载：250/0  |  提交时间：2019/11/10
Molecular Containers Derived from [60]Fullerene through Peroxide Chemistry 期刊论文
ACCOUNTS OF CHEMICAL RESEARCH, 2019, 卷号: 52, 期号: 7, 页码: 1793-1801
作者:  Gan, Liangbing
收藏  |  浏览/下载：48/0  |  提交时间：2019/12/02
Microstructure evolution and Young's modulus of He-implanted nanocrystalline tungsten film 期刊论文
JOURNAL OF NUCLEAR MATERIALS, 2019, 卷号: 518, 页码: 226-233
作者:  Zhu, Fei;  Wang, Dong;  Gao, Ning;  Peng, Haiqing;  Xie, Zheng
收藏  |  浏览/下载：40/0  |  提交时间：2019/11/10
Optical measurements of temperature fields in sooting flames: influence of soot self-absorption 期刊论文
APPLIED PHYSICS B-LASERS AND OPTICS, 2019, 卷号: 125, 期号: 4, 页码: 11
作者:  Wang, Qianlong;  Legros, Guillaume;  Morin, Celine;  Yao, Mingfa;  Cai, Weiwei
收藏  |  浏览/下载：12/0  |  提交时间：2020/10/29
Aerosol delivery device with radiant heating 专利
专利号: US10206429, 申请日期: 2019-02-19, 公开日期: 2019-02-19
作者:  DAVIS, MICHAEL F.;  CHANG, YI-PING;  SEARS, STEPHEN BENSON;  TALUSKIE, KAREN V.;  PIKE, SUSAN K.
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/23
Area-preserving scheme for efficiency enhancement in single-pass tapered free electron lasers 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2019, 卷号: 913, 期号: -, 页码: 107—119
作者:  Tsai, CY;  Emma, C;  Wu, J;  Yoon, M;  Wang, X
收藏  |  浏览/下载：23/0  |  提交时间：2019/12/30
Comparison of holes trapping and protons transport induced by low dose rate gamma radiation in oxide on different SiGe processes 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 103, 期号: 12, 页码: 1-5
作者:  Li, P (Li, Pei)[ 1 ];  He, CH (He, ChaoHui)[ 1 ];  Guo, HX (Guo, HongXia)[ 2,3 ];  Zhang, JX (Zhang, JinXin)[ 4 ];  Li, YH (Li, YongHong)[ 1 ]
收藏  |  浏览/下载：34/0  |  提交时间：2020/01/10

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