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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Atomic-Scale Simulation of the Contact Behavior and Mechanism of the SWNT-AgNW Heterostructure 期刊论文 JOURNAL OF PHYSICAL CHEMISTRY C, 2019, 卷号: 123, 期号: 32, 页码: 19693-19703 作者:  Cui, Jianlei;  Zhang, Jianwei;  Wang, Xuewen;  Theogene, Barayavuga;  Wang, Wenjun 收藏  |  浏览/下载：66/0  |  提交时间：2019/09/19 Computational understanding of the structural and electronic properties of the GeS-graphene contact 期刊论文 PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2019, 卷号: 21, 期号: 14, 页码: 7447-7453 作者:  Zhao, Jinfeng;  Liang, Yan;  Chen, Hong;  Huang, Jindou 收藏  |  浏览/下载：53/0  |  提交时间：2019/06/20 Doping-Induced Second-Harmonic Generation in Centrosymmetric Graphene from Quadrupole Response. 期刊论文 Physical review letters, 2019, 卷号: Vol.122 No.4, 页码: 047401 作者:  Yu Zhang;  Di Huang;  Yuwei Shan;  Tao Jiang;  Zhihong Zhang 收藏  |  浏览/下载：9/0  |  提交时间：2019/12/17 Electronic Devices and Circuits Based on Wafer-Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition 期刊论文 Advanced Electronic Materials, 2019, 卷号: 5, 期号: 8, 页码: 10 作者:  L.Wang;  L.Chen;  S.L.Wong;  X.Huang;  W.G.Liao 收藏  |  浏览/下载：0/0  |  提交时间：2020/08/24 chemical vapor deposition (CVD),integrated circuits,memory,MoS2,transistors,transition-metal dichalcogenides,graphene transistors,integrated-circuits,phase growth,mobility,layers,Science & Technology - Other Topics,Materials Science,Physics